Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

Hajakbari, Fatemeh; Larijani, M. M.; Ghoranneviss, M.; Aslaninejad, M.; Hojabri, Alireza

doi:10.1143/jjap.49.095802

Cited by 29 publications

(14 citation statements)

References 31 publications

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“…The band gap energy (E g ) of the films is calculated from the dependence of absorption coefficient on the incident photon energy (hm) by the relation [21] as:…”

Section: Resultsmentioning

confidence: 99%

Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Hojabri

2016

J Theor Appl Phys

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Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

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“…The band gap energy (E g ) of the films is calculated from the dependence of absorption coefficient on the incident photon energy (hm) by the relation [21] as:…”

Section: Resultsmentioning

confidence: 99%

Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Hojabri

2016

J Theor Appl Phys

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“…3b-d). The optical constants of the annealed films were calculated using transmittance data using Swanepoel method [13] and the optical band gap energy E g was also obtained using Tauc's relation [14]. The calculated refractive index at wavelength of 500 nm is in the range 2.10 to 2.25 and the optical band gap energy of prepared zirconium oxide thin films is in the range from 5.55 to 5.58 eV.…”

Section: Resultsmentioning

confidence: 99%

Optical Properties of Nano-Crystalline Zirconia Thin Films Prepared at Different Post-Oxidation Annealing Times

Hojabri

Pourmohammad

2016

Acta Phys. Pol. A

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The zirconia (ZrO2) is one of the transition-metal oxides with most excellent optical properties which thus attracts great attention in optical engineering. A variety of methods were used for deposition of ZrO2 thin films on different substrates. In the present work, homogenous, transparent nanocrystalline zirconia thin films were grown by thermal oxidation of zirconium (Zr) thin films deposited on quartz substrate using DC magnetron sputtering technique. The objective of this study is to reveal the effect of thermal oxidation time on structural and optical properties of deposited films. The XRD results revealed the formation of single phase ZrO2 with tetragonal structure in the films at different thermal oxidation times. The optical constant of ZrO2 thin films was calculated from the UV-visible transmission spectra. It was found that the increase of thermal oxidation time leads to the increase of transmittance and optical band gap energy of the films. The AFM results showed that thermal oxidation time influences the surface morphology of the films.

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“…According to the RBS data, we can observe that the Ag film thickness increases with increasing deposition time. 30) …”

Section: Rbs Analysismentioning

confidence: 99%

“…The optical band gap (E g ) of the films was determined from the plot of (αhν) 2 versus photon energy (hν) using Tauc's relation. 30) The extrapolation of the linear portion of the curve to the energy intercept yields the optical band gap of the films. Figure 11 shows the plot of (αhν) 2 …”

Section: Electrical Propertiesmentioning

confidence: 99%

Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

Hajakbari

Shafieinejad

2016

Jpn. J. Appl. Phys.

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Effect of substrate temperature on the structural, electrical and optical behaviour of reactively sputtered Ag-Cu-O films M Hari Prasad Reddy, P Narayana Reddy, B Sreedhar et al. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications B Rajesh Kumar and T Subba Rao Correlation between the electrical and structural properties of aluminium-doped ZnO thin films obtained by direct current magnetron sputtering L Avril, Ph Guaino, F Maseri et al. High transmittance hetero junctions based on n-ITO/p-CuO bilayer thin films T P Jaya and P P Pradyumnan Defect analysis of sputter grown cupric oxide for optical and electronics application Goutam Kumar Dalapati, Rasanayagam Sivasayan Kajen, Saeid Masudy-Panah et al. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering C Zubizarreta, E G Berasategui, R Bayón et al. Influence of post-deposition thermal annealing on the properties of pulsed laser deposited tungsten layers K J Lethy, R Vinod Kumar, S Potdar et al.In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

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Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

Cited by 29 publications

References 31 publications

Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Optical Properties of Nano-Crystalline Zirconia Thin Films Prepared at Different Post-Oxidation Annealing Times

Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

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