Optical properties of PbS thin films

Akhmedov, O. R.; Guseinaliyev, M. G.; Абдуллаев, Н. А.; Abdullaev, N. M.; Babaev, S. S.; Kasumov, N. A.

doi:10.1134/s1063782616010036

Cited by 8 publications

(3 citation statements)

References 12 publications

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“…PbS thin films are widely used in optoelectronics and sensors as materials for IR detectors, optical switches, efficient solar radiation conversion devices, chemical sensors, temperature sensors, photodetectors that operate in the infrared wavelength range and photoresistors, temperaturesensitive sensors, detectors in the infrared range of the spectrum [1][2][3][4][5][6]. Lead sulfide, a narrow-band semiconductor, which is the basic thermoelectric materials in the temperature range of 300-950 K and this material is also a promising material in semiconductor optoelectronics for the creation of injection lasers [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Plasma Surface Treatment on the Structure of the Lead Sulfide Film

Amirbekova,

Tolepov,

Guseinov

et al. 2024

jour

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In this work, the effect of the substrate surface on the formation of structured lead sulfide films is studied. For this purpose, the surface of single-crystalline silicon (100) was subjected to plasma treatment in a glow discharge in an argon atmosphere, at a working pressure of 1 Pa and a potential difference across the electrodes of 2 kV. Lead sulfide films were obtained on treated and untreated single-crystalline silicon surfaces by chemical deposition from an aqueous solution of lead nitrate, thiourea and sodium hydroxide at a temperature of 70°C for 30 minutes. The surface morphology, elemental composition, and crystal structure were studied by scanning electron microscopy, energy dispersive analysis, and X-ray diffraction, respectively. As a result, the films deposited on pretreated substrates have a distinctly different surface structure compared to films deposited on untreated substrates. Under the same synthesis conditions, the growth of crystals on the treated surface occurred predominantly along certain lines and were grouped into individual particles, while on the untreated surface a continuous film was formed. Thus, through plasma treatment, crystal growth can be controlled to create nanostructures.

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Section: Introductionmentioning

confidence: 99%

The Effect of Plasma Surface Treatment on the Structure of the Lead Sulfide Film

Amirbekova,

Tolepov,

Guseinov

et al. 2024

jour

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“…Narrow band gap and light sensitivity of the above PbS lms in the infrared range have made these lms useful elements for electro-optics, sensors, and engineering. PbS is used in optical resistance, re detectors, re alarm systems, diode lasers, night vision instruments, temperature and moisture sensors, solar cells, and decorative coatings [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Effect of temperature and time on the structural properties of PbS nanofilms

akbarbeiglou

2018

Scientia Iranica

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In this research, lead acetate as a source of Pb 2+ and thiourea as a source of S 2 have been used, and the e ects of deposition time (tD < 90 min) and deposition temperature (T D : 28, 55 C) on the prepared thin lms of Lead-Sul de have been investigated. In order to investigate the morphology of thin lms and crystalline nanostructure of the lms, atomic force microscopy and X-ray di raction have been utilized, respectively. Values of lattice constant for prepared PbS lms vary in the range of 0.5937-0.5959 nm. Preferred growth orientation for prepared lms is 200. The thickening process of layers has declined after 60 min (t at 28 C: 130-530 nm and t at 55 C: 300-975 nm).

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“…Lead sulfide (PbS) and cadmium sulfide (CdS) are two semiconductors studied since time ago, their combined research has around one century and the direct band gap for PbS is around 0.37 eV at 300 K [1][2][3][4][5][6][7][8][9][10]. The PbS is mainly used as an infrared detector in various fields has been used mainly as an infra-red detector in another diverse field [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Thin Films of Sulfides of Cadmium, Lead and Copper by Chemical Bath Deposition

Hernandez¹,

Castillo²

2017

Thin Film Processes - Artifacts on Surface Phenomena and Technological Facets

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The goal of this chapter is to present three kind of thin films for the materials, done by Chemical Bath Deposition technique, the materials are CdS, PbS and CuS. The characterization has been diversified, but consisting mainly X-ray Diffraction (XRD) giving hexagonal, cubic and amorphous structures of CdS, PbS and CuS respectively. The Raman dispersion let to found the characteristics peaks of vibration, one for the CdS located on 300.7 cm −1 , three for PbS and two more for the CuS. We use X-rays Photoelectron Spectroscopy to formalize the chemical composition analysis, from this analysis we could to proof the high purity of the chemical bath deposition method in the materials preparation. We used UV-Vis Spectroscopy to determine simple optical responses, getting the biggest transmittances of 72% for CdS, 45% for PbS, and 80% for CuS, and direct energy band gaps of 2.47 eV for CdS, 1.78 eV for CuS as ground and with thermic annealing 2.45 eV which is believed result of amorphous to crystalline morphology changes, the indirect bandgap 0.94 eV is measured too. The AFM given information about the surface morphology and roughness, Scanning Electron Microscopy (SEM) micrography shows the polycrystallinity nature of the CuS including the smooth.

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Optical properties of PbS thin films

Cited by 8 publications

References 12 publications

The Effect of Plasma Surface Treatment on the Structure of the Lead Sulfide Film

The Effect of Plasma Surface Treatment on the Structure of the Lead Sulfide Film

Effect of temperature and time on the structural properties of PbS nanofilms

Synthesis of Thin Films of Sulfides of Cadmium, Lead and Copper by Chemical Bath Deposition

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