Optical spin initialization of spin-
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 silicon vacancy centers in 
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 at room temperature

Singh, Harpreet; Анисимов, А. Н.; Бреев, И. Д.; Баранов, П. Г.; Suter, Dieter

doi:10.1103/physrevb.103.104103

Cited by 10 publications

(22 citation statements)

References 41 publications

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“…When the V − Si are irradiated with a suitable wavelength laser, population is transferred to the excited state. Most of the population falls back to the ground state by spontaneous emission, but some of it undergoes intersystem crossing (ISC) to the shelving states and preferentially returns to specific ground-state spin-levels depending upon the type of vacancies [5,9,23]: in V 2 (V 3 ), the population preferentially falls into the ±3/2 (±1/2) spin states [10]. Another process that affects the dynamics of the siliconvacancy is spin relaxation : spin-lattice (T 1 relaxation) and spin-spin relaxation (T 2 relaxation).…”

Section: Systemmentioning

confidence: 99%

“…Another process that affects the dynamics of the siliconvacancy is spin relaxation : spin-lattice (T 1 relaxation) and spin-spin relaxation (T 2 relaxation). We studied these relaxation processes at room temperature and determined the corresponding relaxation rates in previous works [9,10].…”

Section: Systemmentioning

confidence: 99%

“…The PL from the sample was collected and detected by an avalanche photodiode (APD) module after passing through a 850 nm long-pass filter. The electrical signal from the APD was recorded by a lock-in amplifier referenced to the ON/OFF modulation signal [9,10]. Figures 1 and 2(a) show two such spectra, which were recorded at room temperature, in a field of 4.5 mT (Figure 1) and 0 (Figure 2(a)), respectively, by recording the lock-in signal as a function of the RF frequency.…”

Section: A Continuous-wave Odmrmentioning

confidence: 99%

“…Apart from that, mature fabrication techniques exist for SiC. Here we focus on the silicon vacancies in the 6H-SiC polytype [9][10][11], where three types of Si vacancies have been identified, labelled V 1 , V 2 and V 3 , which correspond to different lattice positions [5,12,13]. It has been shown that siliconvacancies at hexagonal sites h corresponds to V 1 , while V 3 and V 2 are at cubic lattice sites k 1 and k 2 [14].…”

Section: Introductionmentioning

confidence: 99%

“…When the vacancies are negatively charged (V − Si ) , they have spin 3/2 and the ground state spin sublevels can be polarized by optical irradiation [10,11]. In previous work, we measured relaxation rates and optical spin initialization of V − Si at room temperature [9,10], the polarization dependencies of the ZPLs and the ODMR contrast as a function of temperature [15].…”

Section: Introductionmentioning

confidence: 99%

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Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Singh,

Hollberg,

Anisimov

et al. 2021

Preprint

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Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are in the range of a few MHz, the same order of magnitude as the Rabi frequencies of typical control fields. As a consequence, the rotating wave approximation becomes invalid and nonlinear processes like the absorption and emission of multiple photons become relevant. This work focuses on multiphoton transitions of negatively charged silicon vacancies driven by a strong RF field. We present continuous-wave optically detected magnetic resonance (ODMR) spectra measured at different RF powers to identify the 1-, 2-, and 3-RF photon transitions of different types of the silicon vacancy in the 6H-SIC polytype. Time-resolved experiments of Rabi oscillations and free induction decays of these multiple RF photon transitions were observed for the first time. Apart from zero-field data, we also present spectra in magnetic fields with different strength and orientation with respect to the system's symmetry axis.

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Section: Systemmentioning

confidence: 99%

Section: Systemmentioning

confidence: 99%

Section: A Continuous-wave Odmrmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Singh,

Hollberg,

Anisimov

et al. 2021

Preprint

Self Cite

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Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Bathen

Vines

2021

Adv Quantum Tech

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Point defects in semiconductors are emerging as an important contender platform for quantum technology (QT) applications, showing potential for quantum computing, communication, and sensing. Indeed, point defects have been employed as nuclear spins for nanoscale sensing and memory in quantum registers, localized electron spins for quantum bits, and emitters of single photons in quantum communication and cryptography. However, to utilize point defects in semiconductors as single-photon sources for QT, control over the influence of the surrounding environment on the emission process must be first established. Recent works have revealed strong manipulation of emission energies and intensities via coupling of point defect wavefunctions to external factors such as electric fields, strain and photonic devices. This review presents the state-of-the-art on manipulation, tuning, and control of single-photon emission from point defects focusing on two leading semiconductor materials-diamond and silicon carbide.

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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

et al. 2022

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Controllable solid-state spin qubits are currently becoming useful building blocks for applied quantum technologies. Here, we demonstrate that in a specific type of silicon-vacancy in the 6H-SiC polytype the excited-state fine structure is inverted, compared to 4H-SiC. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin–orbit interaction. We show that this system is well suited for the implementation of robust spin–photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.

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Optical spin initialization of spin- 32 silicon vacancy centers in 6H−SiC at room temperature

Cited by 10 publications

References 41 publications

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

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