Optical transitions in Cd x Hg1 − x Te-based quantum wells and their analysis with account for the actual band structure of the material

Bazhenov, N. L.; Shilyaev, A. V.; Mynbaev, K. D.; Zegrya, G. G.

doi:10.1134/s1063782612060061

Semiconductors

2012

DOI: 10.1134/s1063782612060061

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Optical transitions in Cd x Hg1 − x Te-based quantum wells and their analysis with account for the actual band structure of the material

N. L. Bazhenov

A. V. Shilyaev

K. D. Mynbaev

et al.

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Cited by 3 publications

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Optical transitions in Cd x Hg1 − x Te-based quantum wells and their analysis with account for the actual band structure of the material

Cited by 3 publications

References 19 publications

A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures

Luminescence of HgCdTe– and InAsSb–based quantum–well heterostructures

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