Optically and electrically controlled switchers and electron beam splitters based on topological edge states

Lü, Xiao-Long; Liu, Jun-Feng

doi:10.1016/j.rinp.2024.107591

Results in Physics

2024

DOI: 10.1016/j.rinp.2024.107591

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Optically and electrically controlled switchers and electron beam splitters based on topological edge states

Xiao-Long Lü,

Jun-Feng Liu

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2024

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Cited by 2 publications

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Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

Lü,

Hu,

et al. 2024

Micro and Nanostructures

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Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

Lü,

Hu,

et al. 2024

Micro and Nanostructures

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Phase diagrams and topological mixed edge states in silicene with intrinsic and extrinsic Rashba effects

Lü,

Zhang,

et al. 2024

Phys. Rev. Research

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We investigate the topological phases and corresponding edge states in silicene with fixed intrinsic and extrinsic Rashba spin-orbit couplings. The results show that silicene can exhibit four distinct topological phases, such as two types of valley-polarized quantum anomalous Hall effect (QAHE) and two types of QAHE that can be effectively controlled by the exchange field and electric field. In addition, these topological phases only correspond to the valley edge states distributed at the boundary of silicene. In particular, when the off-resonant circularly polarized (ORCP) light is further considered, silicene can host richer topological phases that are characterized by the Chern numbers from C=−3 to C=3, where the corresponding mixed edge states—where the valley and nonvalley edge states could coexist—can remarkably appear. More interestingly, the special higher Chern numbers C=±3 determine two valley edge states and one nonvalley edge state, with the right-moving or left-moving direction. These peculiar edge states are attributed to the ORCP light destroying the collapse of the Dirac cones that the valley edge states bridge. Additionally, silicene can experience multiple edge-state transitions for identical Chern numbers C=±2 between the valley edge state, nonvalley edge state, and two types of mixed edge state, under the ORCP light. This work may provide a platform and point of view for investigating other forms of topological edge state and is beneficial for designing multifunctional topological devices. Published by the American Physical Society 2024

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Optically and electrically controlled switchers and electron beam splitters based on topological edge states

Cited by 2 publications

References 46 publications

Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

Phase diagrams and topological mixed edge states in silicene with intrinsic and extrinsic Rashba effects

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