Optimisation of sub-threshold and saturation parameters of gate stack double gate (GSDG) MOSFET using Moth-Flame optimization algorithm

Chowdhury, Dibyendu; De, Bishnu Prasad; DasMahapatra, Suddhendu; Maiti, Madhusudan; Kar, Rajib; Mandal, Durbadal

doi:10.1016/j.matpr.2022.11.378

Materials Today: Proceedings

2023

DOI: 10.1016/j.matpr.2022.11.378

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Optimisation of sub-threshold and saturation parameters of gate stack double gate (GSDG) MOSFET using Moth-Flame optimization algorithm

Dibyendu Chowdhury

Bishnu Prasad De

Suddhendu DasMahapatra

et al.

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Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance

Chowdhury,

DasMahapatra,

et al. 2024

J. Electron. Mater.

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Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance

Chowdhury,

DasMahapatra,

et al. 2024

J. Electron. Mater.

View full text Add to dashboard Cite

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Optimisation of sub-threshold and saturation parameters of gate stack double gate (GSDG) MOSFET using Moth-Flame optimization algorithm

Cited by 1 publication

References 23 publications

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance

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