Optimisation of the thermodynamic and phase diagram data in the ternary As-Ga-In system

Phase stability and the arsenic vacancy defect in InxGa1−xAs

“…4 where our data are compared with similar data from the literature. The results suggest that In x Ga 1−x As will be stable across the entire compositional range at temperatures greater than 550 K. Figure 4 shows that our results fall between the previous DFT-B3LYP simulations of Pentin et al 42 and the experimental data of Shen et al 43 that were extrapolated from thermodynamic functions obtained close to the liquidsolid interface. Pentin et al 42 argue that such extrapolations are frequently unreliable while acknowledging that their DFT simulations ignore any vibrational contribution to the enthalpy.…”

“…For an alloy, such as In x Ga 1−x As, where the In and As atoms are randomly distributed on the 4a Wyckoff sites, the configurational entropy can be determined by 42 and data extrapolated from the liquid-solid equilibria of Shen et al 43 0 x 1) of Ga on a mole of 4a lattice sites. Setting G to zero and solving for T from Eq.…”

Thermodynamic Stability of GaAs/InAs Heterostructure

“…We use a first principle method [ was calculated and the maximum temperature of the miscibility gap was found to be 546"C, which is in excellent agreement with a thermodynamic assessment of As-Ga-In ternary system [4].…”

Diameter‐Dependent Growth Direction of InxGa1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

“…For a fixed value of C As and C 3 , the value of Δ μ decreases with increasing x except for C 3 = 0.1 at which chemical potential remains almost constant with x . This is attributed to the decrease of enthalpy of mixing of InAs and GaAs at higher In composition . Moreover, when x is lesser than 0.4, it is observed that Δ μ increases with C 3 while for x higher than 0.4, Δ μ decreases with C 3 .…”