Optimization of bromine-emerging etching compositions K₂Cr₂O₇-HBr-ethylene glycol for forming a polished surface of CdTe, Zn_xCd_1-xTe and Cd_xHg_1-xTe

Abstract

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FORMATION OF THE CdTe-POLISHED SURFACE

“…Preliminary surface treatment of semiconductors consisted of the following steps: grinding of the plates by abrasive powders marks M10-M1 (3-. 5 min) → mechanical polishing with diamond paste (3-5 min) → chemical etching to remove the damaged layer (80-100 μm) by the HNO3 -HBr -C4H6O6 etchants compositions → finishing chemicalmechanical polishing by new slow etchants [5].…”