Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

Parabolic–Gaussian Double Quantum Wells under a Nonresonant Intense Laser Field

“…GaAs materials generally have a wavelength of about 940 nm. They are semiconductors that are used in various optoelectronic applications, such as TV remotes, cameras, medical applications, and remote-sensing, inducing, and intelligent systems [13].…”

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

“…It is the most studied and technologically utilized compound semiconductor material due to its several unique properties, such as its wider direct bandgap energy (1.42 eV at room temperature [ 1 , 2 ]), low exciton binding energy (4.2 meV) [ 3 ], and higher electron mobility (8800 cm 2 V −1 s −1 ) [ 4 ]) compared to crystalline silicon. GaAs also exhibits light emitting [ 5 ], electromagnetic [ 6 ], and photovoltaic [ 7 ] properties. It can be utilized in high-speed semiconductor devices [ 8 ], high-power microwave and millimeter-wave devices [ 9 ], optoelectronic devices [ 5 , 10 , 11 , 12 ], medical detectors [ 13 ], and imaging devices [ 13 , 14 , 15 , 16 ].…”

“…GaAs also exhibits light emitting [ 5 ], electromagnetic [ 6 ], and photovoltaic [ 7 ] properties. It can be utilized in high-speed semiconductor devices [ 8 ], high-power microwave and millimeter-wave devices [ 9 ], optoelectronic devices [ 5 , 10 , 11 , 12 ], medical detectors [ 13 ], and imaging devices [ 13 , 14 , 15 , 16 ]. Moreover, its bandgap energy can be tuned to the range appropriate for several applications, such as long wavelength emitters [ 17 ], detectors [ 18 ], and spintronic-related devices [ 17 ], by alloying it with other elements such as In, Al, Sb, and N to form InGaAs, AlGaAs, GaAsSb, and GaAsN, respectively, etc.…”