Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors

“…The QCL wafer used in this experiment was grown by metalorganic chemical vapor deposition (MOCVD) on a conducting InP:S substrate [17]. The lower cladding consists of three layers: an InP layer (InP:Si, n = 1 × 10 17 cm −3 , d = 3.5 μm), a thin grading layer (InGaAsP:Si, n = 1 × 10 17 cm −3 , d = 30 nm), and an InGaAs layer (InGaAs:Si, n = 3 × 10 16 cm −3 , d = 520 nm).…”

Multi-stack quantum cascade lasers

“…A thick InP spacer separating the active regions of the two QCLs is used to prevent coupling between the two optical waveguides. We demonstrate excellent room temperature performance from this record-thick device, grown by metal-organic chemical vapor deposition [3] (MOCVD). The ability to grow by MOCVD such thick QCL structure is particularly interesting for industrial production prospects.…”

The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

“…Superlattices based on InGaAs/AlInAs heterostructure are mostly used in the construction of quantum cascade lasers (QCLs) [2,3]. The emission wavelength of QCLs based on InGaAs/AlInAs lattice-matched to InP substrate, covers the infrared region from 3.5 to 24 μm, which gives the opportunity to apply them in applications in chemical and biological sensing or spectroscopy [4]. The QCL core contains hundreds or even thousands of repetitions of thin layers with a thickness in the range of 0.5-10 nm.…”