Optimization of output matching network for class F power amplifier according to envelope in the envelope elimination and restoration transmitter

Lee, Chong Min; Seo, Chulhun

doi:10.1002/mop.25335

Cited by 3 publications

(5 citation statements)

References 10 publications

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“…Also, the phase of the third IMD has become 180 through a phase shifter and 330 in the final output part of the DA. This is designed to be À30 for maximum improvement of linearity applying distortion scheme [7,9].…”

Section: Design Of Pam Using Predistortion Schemementioning

confidence: 99%

Control scheme of harmonics and third‐order intermodulation distortion with composite right/left‐handed structure for linearity enhancement of power amplifier module

Lee

Seo

2013

Micro & Optical Tech Letters

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In this article, in order to enhance the linearity of power amplifier modules (PAM), we have suppressed the harmonics at the output port of a high-power amplifier (HPA) and cancelled the thirdorder intermodulation distortion (third IMD) by a predistortion scheme. The matching network to suppress the harmonics consists of metamaterial like the composite right/left-handed structure. Both the second and third harmonics are suppressed over 27 dBc. A phase of generated third IMD at the output of the drive amplifier has changed in order to offset the third IMD of HPA. The harmonics of the proposed PAM suppresses over 6 dB more than a single HPA and over 20 dB more than a reference power amplifier. The PAM has 37 dBm of output power and 21.6 dB of power gain. The second harmonic and third IMD are À53 and À42.5 dBc about PAM, respectively.ABSTRACT: A methodology to design high-power amplifiers composed of several amplifier blocks and passive combiners/dividers is proposed. The optimum matching condition between amplifiers and combiners has been found using the mixed-mode S-parameters approach. Measurements and computer-aided design simulations have been successfully used to validate the proposed approach. V C 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1500-1504, 2013; View this article online at wileyonlinelibrary.com.

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Section: Design Of Pam Using Predistortion Schemementioning

confidence: 99%

Control scheme of harmonics and third‐order intermodulation distortion with composite right/left‐handed structure for linearity enhancement of power amplifier module

Lee

Seo

2013

Micro & Optical Tech Letters

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“…Hence, the average efficiency of the PA for the modulated signals can be significantly decreased . This affects the battery time of handheld devices for wireless communication because PAs are consuming the most power in the transceivers .…”

Section: Introductionmentioning

confidence: 99%

“…To improve the average efficiency of the PAs, various methods have been pursued . Bias modulation techniques are very straightforward efficiency enhancement methods.…”

Section: Introductionmentioning

confidence: 99%

Efficiency enhanced CMOS digitally controlled dynamic bias switching power amplifier for LTE

Kim¹,

Bae

Ham³

et al. 2015

Micro & Optical Tech Letters

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This article presents an efficiency enhanced CMOS power amplifier using a digitally controlled dynamic bias switching method. It is composed of a dynamic bias switching circuit and a power amplifier circuit. The control signal for bias switching operation is generated by the digital signal processing unit according to the amplitude of the envelope signal. Then, the dynamic bias switching circuit offers two different supply voltages to the drain of the power amplifier. The low supply voltage is generated by a DC–DC converter within the dynamic bias switching circuit, while the high voltage can be directly supplied by the battery. The threshold voltage for the envelope signal and the low supply voltage level were analytically optimized for maximum efficiency enhancement using the envelope statistics of the LTE signal. The gain difference between low and high bias voltage conditions was compensated for better linearity of the power amplifier. The proposed dynamic bias and power amplifier IC's were designed and fabricated using 0.18 μm CMOS process. The fabricated CMOS power amplifier IC using the dynamic bias switching method was evaluated using a 64 QAM LTE up‐link signal which has a center frequency of 1.75 GHz, a signal bandwidth of 5 MHz, and a peak‐to‐average power ratio of 7.76 dB. It exhibited a power‐added efficiency of 39.3% and an error vector magnitude of 4.6% at an average output power of 22 dBm, while the stand‐alone CMOS power amplifier has an efficiency of 34.5%. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2315–2321, 2015

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“…Hence, the average efficiency of the PA for the modulated signals can be significantly decreased [1,2]. This affects the battery time of handheld devices for wireless communication because PAs are consuming the most power in the transceivers [3].…”

Section: Introductionmentioning

confidence: 99%

“…To improve the average efficiency of the PAs, various methods have been pursued [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Bias modulation techniques are very straightforward efficiency enhancement methods.…”

Section: Introductionmentioning

confidence: 99%

Dual band patch antenna based on complementary rectangular split-ring resonators

Ortiz

Falcone

Sorolla

2009

2009 Asia Pacific Microwave Conference

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Optimization of output matching network for class F power amplifier according to envelope in the envelope elimination and restoration transmitter

Cited by 3 publications

References 10 publications

Control scheme of harmonics and third‐order intermodulation distortion with composite right/left‐handed structure for linearity enhancement of power amplifier module

Control scheme of harmonics and third‐order intermodulation distortion with composite right/left‐handed structure for linearity enhancement of power amplifier module

Efficiency enhanced CMOS digitally controlled dynamic bias switching power amplifier for LTE

Dual band patch antenna based on complementary rectangular split-ring resonators

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