Optimization of structural, optical and electrical properties of CdZnTe thin films with the application of thermal treatment

Chander, Subhash; Dhaka, M.S.

doi:10.1016/j.matlet.2016.06.093

Cited by 29 publications

(13 citation statements)

References 18 publications

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“…The energy gap can be calculated from the expression, E g =2.303×2KΔlog 10 ρ/ΔT -1 , where K is the Boltzmann's constant. The band gap is found to be1.98eV which is in agreement with band gap calculated from tauc formula and reported work (band gap varies from approximately 1.4 to 2.2eV) [13][25][26] [27].…”

Section: Resistivity Measurementsupporting

confidence: 89%

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Structural, morphological, electrical and optical properties of Zn doped CdTe thin films

Surabhi¹,

Anurag²,

Kumar³

2022

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Cadmium Zinc Telluride (CdZnTe) is a ternary Ⅱ- Ⅵundeviating band gap semiconductor with cubic Zinc blende formation and it is a propitious material for ambient temperature xray as well as gamma ray sensor detectors. Cadmium Zinc Telluride (CdZnTe) thin layer coating were developed on nickel substrate by chemical bath deposition in non-aqueous approach. The as grown films were inspected by X-ray diffraction (XRD), Field emission scanning electron microscope (FESEM), Scanning electron microscope, Fourier transform infrared spectroscopy (FTIR), PL spectra, UV spectra, Raman spectroscopy and FourProbe analysis. Studies tell that as grown films are poly-crystalline in nature along with cubic zinc blende formation. The structural properties like crystallite size, lattice constant, micro strain as well as dislocation density were evaluated. FESEM and SEM analysis reveals that the as developed films are smooth and equal sized uniform spherical grains distributed in single state as well as in cluster form. The average size of grain film is observed to be 12.33 nm. Optical study reveals the broad transmittance escorted by the band gap energy of 2.2eV. Electrical study reveals that resistivity of as grown film is 5.1×105 Ω-cm at room temperature.

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Section: Resistivity Measurementsupporting

confidence: 89%

“…The mean atomic % of Cd, Zn and Te is observed to be 17.64%, 1.44% and 80.92% respectively. According to Subhash Chander et.al [18]. The elemental proportion of CdZnTe thin layer coating films have ratio of Zn much lesser than cadmium and tellurium.…”

Section: Surface Morphology and Elemental Compositional Studymentioning

confidence: 99%

Structural, morphological, electrical and optical properties of Zn doped CdTe thin films

Surabhi¹,

Anurag²,

Kumar³

2022

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“…By projecting the straight line on the Tauc plot (𝛼h𝜈) 2 v/s h𝜈 for zero absorption coefficient, the energy band gap was calculated, where 𝛼 is the absorption coefficient, h is the Planck constant and 𝜈 is the photon's frequency. [30] The Tauc plots for CZT and CMT thin films are demonstrated in Figure 4b value of x in our samples was 0.10 and 0.15 for CZT and CMT, respectively.…”

Section: Analysis Of Physical Properties Of Czt and Cmt Thin Filmsmentioning

confidence: 55%

“…By projecting the straight line on the Tauc plot ( αhν ) 2 v/s hν for zero absorption coefficient, the energy band gap was calculated, where α is the absorption coefficient, h is the Planck constant and ν is the photon's frequency. [ 30 ] The Tauc plots for CZT and CMT thin films are demonstrated in Figure 4b and Figure S6, Supporting Information. It was verified that CZT and CMT are semiconducting materials with direct energy band gaps of 1.76 and 1.83 eV by the almost linear response of Tauc plots.…”

Section: Resultsmentioning

confidence: 99%

Toward Development of CdZnTe and CdMnTe Thin Film‐Based Solar Cells: Optimized Properties and a Comparative Performance Exploration

Chander

Tripathi

2023

Adv Materials Inter

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Thin‐film solar cells (TFSCs) are garnering attention for their unstoppable growth as a sustainable energy source as well as their innovations and indispensability. TFSCs' efficiency has plateaued, necessitating the development of novel, practical, and inexpensive alternative energy sources. CdTe material lacks the band gap for the top layer. It can still be used as an absorber top layer in tandem photovoltaic cells by forming two new, promising materials, Cd1–xZnxTe (CZT) and Cd1–xMnxTe (CMT). Consequently, CZT and CMT based PV cells have been explored, and an attempt has been made to provide an alternative to cadmuim telluride. After exploring the physical properties of CZT and CMT thin films, CZT and CMT based photovoltaic cells were fabricated using the vacuum evaporation method. Both devices (with low absorber layer thickness, 1.05 µm) showed a power conversion efficiency of 6.67% and 6.11%, respectively. The depletion layer width and dopant densities of both photovoltaic cells were also determined by capacitance–voltage measurements. The quantum efficiencies were measured to identify the specific losses that are causing the measured short circuit current density to deviate from its ideal value. The reproducibility of the devices was also tested, and it is found to be good with an 8–12% deviation.

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“…CdZnTe is considered one of the most significant chalcogenide materials and belongs to the II-VI ternary semiconductor compound. It is a promising candidate for several technological applications, such as in optoelectronics and tandem solar cells [20][21][22], optoelectronics [23], and radiation detectors [19,20,[24][25][26], as it is used as a photoanode for watersplitting applications [27].…”

Section: Introductionmentioning

confidence: 99%

Tuning structural, electrical, linear, and nonlinear optical properties of cadmium zinc telluride quantum dot thin films

Mahdy

Mahmoud

Mahdy

2022

Journal of Materials Research

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Quantum dots of Cd0.18Zn0.14Te0.68 thin films of various thicknesses are deposited on a glass substrate using inert gas condensation and characterized using many techniques. Structural analysis confirms the cubic polymorph of the thin films. The particle size increased from 5.7 to 10.35 nm as the film thickness increased from 10 to 100 nm. Bandgap calculations show two direct allowed transitions, one of which is 1.8 eV for different thicknesses. The other transition changes from the ultra-violet region (3.7 eV) for 10 nm thickness to yellow (2 eV) for 100 nm thickness, depending on the particle size. This result suggests that this material is suitable for use in multiple absorption layers of the same material rather than multilayers of different materials in tandem solar cells. The optical linear and nonlinear parameters highly depend on the particle size. Electrical conductivity shows intrinsic conduction with low activation energies from ambient temperature to 336 K. Graphical abstract

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Optimization of structural, optical and electrical properties of CdZnTe thin films with the application of thermal treatment

Cited by 29 publications

References 18 publications

Structural, morphological, electrical and optical properties of Zn doped CdTe thin films

Structural, morphological, electrical and optical properties of Zn doped CdTe thin films

Toward Development of CdZnTe and CdMnTe Thin Film‐Based Solar Cells: Optimized Properties and a Comparative Performance Exploration

Tuning structural, electrical, linear, and nonlinear optical properties of cadmium zinc telluride quantum dot thin films

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