Optimization of thick resist in 90nm mirror- bit&amp;#x00AE; flash memory to improve sector edge cell threshold voltage

Chen, J.J.; Yazdani, Niloofar; Shiraiwa, H.; Lingunis, M.; Kamal, T.; Karlsson, Olov; Banerjee, Bhaskar

doi:10.1109/issm.2007.4446876

2007 International Symposium on Semiconductor Manufacturing 2007

DOI: 10.1109/issm.2007.4446876

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Optimization of thick resist in 90nm mirror- bit® flash memory to improve sector edge cell threshold voltage

J.J. Chen¹,

Niloofar Yazdani²,

H. Shiraiwa³

et al.

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Optimization of thick resist in 90nm mirror- bit® flash memory to improve sector edge cell threshold voltage

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