2020
DOI: 10.1109/jphotov.2019.2947131
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Optimization of Transparent Passivating Contact for Crystalline Silicon Solar Cells

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Cited by 21 publications
(23 citation statements)
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“…The most explored approaches consist in alloying the silicon films with oxygen or carbon, [8][9][10][11][12][13][14] developing doped hydrogenated nanocrystalline silicon oxide [15][16][17][18][19][20][21] or silicon carbide films via hot-wire chemical vapor deposition (CVD). 22 Alternatively, highly transparent TCO electrodes [23][24][25] or improved antireflective stack 26 are used. Furthermore, others suggested to replace the (i)a-Si:H passivation layer with SiO 2 obtaining remarkable η.…”
Section: Introductionmentioning
confidence: 99%
“…The most explored approaches consist in alloying the silicon films with oxygen or carbon, [8][9][10][11][12][13][14] developing doped hydrogenated nanocrystalline silicon oxide [15][16][17][18][19][20][21] or silicon carbide films via hot-wire chemical vapor deposition (CVD). 22 Alternatively, highly transparent TCO electrodes [23][24][25] or improved antireflective stack 26 are used. Furthermore, others suggested to replace the (i)a-Si:H passivation layer with SiO 2 obtaining remarkable η.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, the metallization gives results to an important loss mechanism through shading the PV converter, as metals are not transparent to light for most of the solar spectrum. Even though there is a lot of progress done in the development of transparent conductive materials (Kohler et al 2020;Morales-Masis et al 2015;Saive et al 2016), using metals represents the most common method to realize the contact grid. Yet, the trade-off between ensuring low resistivity and minimal shadowing can be optimized through geometry of the grid contact for specific operation condition (i.e.…”
Section: Grid Optimizationmentioning
confidence: 99%
“…In this work two tasks are achieved: 1) low series resistance without TCO, and 2) good metal/a-Si:H contact by an oxidation treatment at the interface. Further development that contributes to TCO-free SHJ solar cells could be replacing rear side TCO by proper back reflection design 28,29 and developing more transparent front-side heterojunction materials such as MoOx 30 , nc-SiOx 31 and µc-SiC 32,33 . In Quokka3 simulation models, n-type silicon wafers with a resistivity of 1.09 Ωcm and a thickness of 170 µm were used.…”
Section: Potential Of Substituting Tco Layer By Lateral C-si Bulk Conmentioning
confidence: 99%