Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation

Abstract

We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at VDS=400V and VGS=15V and a low specific on-resistance (RON,SP) of 2.1 mΩ.cm2 at VGS=15V designed for xEV traction inverter applications. The RDS(on) at VGS=15V increases from 15mΩ at 25 °C to 21 mΩ at 175 °C. A low turn-on (EON) and turn-off (EOFF) switching energy loss of 95.5μJ and 67μJ at IDS=75A, VDS=400V was measured at 25 °C. The gate oxide lifetime at worst case operating fields of 5MV/cm is >> 20 years.