Optimized infrared light response speed <80 ms by applying an interface buffer layer to Schottky components

Abstract

A Schottky infrared photodetector with dual mechanisms, where both photoelectric and photothermal current generation mechanisms coexist is presented. The dominant role of these mechanisms changes with surface passivation process. In the device without passivation process, the device exhibits high responsivity due to the presence of the photothermal effect but has slow rise and recovery times. However, after surface passivation treatment, the device characteristics are dominated by the photoelectric effect, showing a significantly faster response time, capable of detecting signal level changes within less than 80 ms, with a constant current difference between on and off states. This unique multifunctionality promotes the development of Schottky device capable of achieving multiple optical detection purposes.