Optimized Silicon QPSK Modulator With 64-Gb/s Modulation Speed

Zhu, Hongying; Zhou, Linjie; Wang, Tao; Liu, Lei; Wong, Claudia; Zhou, Yichao; Yang, Rui; Li, Xinwan; Chen, Jianping

doi:10.1109/jphot.2015.2425875

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…Figure 2(a) shows the normalized transmission spectra of the on-chip modulator under various bias voltages. The insertion loss of the modulator is about 12 dB, which is larger than our previous design [48,49]. We speculate that the large loss comes from the mask misalignment and doping concentration deviation.…”

Section: A Characterization Of Key Elementsmentioning

confidence: 62%

Silicon integrated microwave photonic beamformer

Zhu

Shan

et al. 2020

Optica

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109

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Optical beamforming networks (OBFNs) based on optical true time delay lines (OTTDLs) are well-known as the promising candidate to solve the bandwidth limitation of traditional electronic phased array antennas (PAAs) due to beam squinting. Here we report the first monolithic 1×8 microwave photonic beamformer based on switchable OTTDLs on the silicon-on-insulator platform. The chip consists of a modulator, an eight-channel OBFN, and 8 photodetectors, which includes hundreds of active and passive components in total. It has a wide operating bandwidth from 8 to 18 GHz, which is almost two orders larger than that of electronic PAAs. The beam can be steered to 31 distinguishable angles in the range of -75.51° to 75.64° based on the beam pattern calculation with the measured RF response. The response time for beam steering is 56 μs. These results represent a significant step towards the realization of integrated microwave photonic beamformers that can satisfy compact size and low power consumption requirements for the future radar and wireless communication systems.

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Section: A Characterization Of Key Elementsmentioning

confidence: 62%

Silicon integrated microwave photonic beamformer

Zhu

Shan

et al. 2020

Optica

Self Cite

109

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“…Intra-datacenter connectivity at 400 Gb/s is currently in the spotlight, and now is the right time for 400 Gb/s links to replace <100 Gb/s or even 100 Gb/s links. To optimize the 400 Gb/s technology, significant research on III-V directly modulated lasers (DMLs) [11,12], externally modulated lasers (EMLs) [13,14] and silicon photonics-based Mach-Zehnder modulators (MZMs) has been conducted [15][16][17][18][19][20]. Generally, DML is the most cost-effective solution, with a small footprint, but it suffers serious frequency chirp at high data rates [21]; therefore, a slightly more complex DSP must be used, especially for longer-distance communication.…”

Section: Introductionmentioning

confidence: 99%

Low-Cost 400 Gbps DR4 Silicon Photonics Transmitter for Short-Reach Datacenter Application

et al. 2021

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Targeting high-speed, low-cost, short-reach intra-datacenter connections, we designed and tested an integrated silicon photonic circuit as a transmitter engine. This engine can be packaged into an optical transceiver module which meets the QSFP-DD Form Factor, together with other electrical/optical components. We first present the design and performance of a high-speed silicon modulator, which had a 3-dB EO bandwidth of >40 GHz and an ER of >5 dB. We then incorporated the engine onto a test board and injected a 53.125 Gbaud PAM4 signal. Clear eye patterns were observed at the receiver with TDECQ ~3 dB for all four lanes.

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“…Modulation in silicon is typically realized based on carrier injection [6] , carrier accumulation [7] , or carrier depletion [8] using the free-carrier plasma dispersion effect. There are two types of silicon modulator structures.…”

mentioning

confidence: 99%

“…A push-pull drive thus resulted. The fabrication details can be found in our previous work [8,11] . We first measured the transmission spectra of the MIM by using a Santec Swept Test System (Santec TLS-710).…”

mentioning

confidence: 99%

Low-loss high-extinction-ratio single-drive push-pull silicon Michelson interferometric modulator

et al. 2017

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We demonstrate a high-speed silicon carrier-depletion Michelson interferometric (MI) modulator with a low onchip insertion loss of 3 dB. The modulator features a compact size of <1 mm 2 and a static high extinction ratio of >30 dB. The V π ·L π of the MI modulator is 0.95-1.26 V·cm under a reverse bias of −1 to −8 V, indicating a high modulation efficiency. Experimental results show that a 4-level pulse amplitude modulation up to 20 Gbaud is achieved with a bit error rate of 6 × 10 −3 , and a 30 Gb/s binary phase-shift-keying modulation is realized with an error vector magnitude of 25.8%.

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Optimized Silicon QPSK Modulator With 64-Gb/s Modulation Speed

Cited by 8 publications

References 20 publications

Silicon integrated microwave photonic beamformer

Silicon integrated microwave photonic beamformer

Low-Cost 400 Gbps DR4 Silicon Photonics Transmitter for Short-Reach Datacenter Application

Low-loss high-extinction-ratio single-drive push-pull silicon Michelson interferometric modulator

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