Optoelectronic characteristics of UV photodetector based on GaN/ZnO nanorods p-i-n heterostructures

Zhang, Lichun; Zhao, Fangchao; Wang, Caifeng; Wang, Feifei; Huang, Ruizhi; Liu, Qingshan

doi:10.1007/s13391-015-5128-4

Cited by 33 publications

(16 citation statements)

References 26 publications

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“…The response time τ r is defined as the rising time from 0 to 90% of maximum photocurrent that <0.2 s (beyond the resolution of the instrument), and the decay time τ d , which defined as falling time from 100 to 10% of maximum photocurrent that measured as 0.4 s. It indicated that the response/recovery speed of the photocurrent is fast enough for the application. It was worth noting that the detector fabricated in this work exhibited better detecting performance compared to references, such as single InGaN/GaN QWs nanowire, ZnO nanowire array, TiO 2 nanowire array, GaN nanowire array, GaN/ZnO nanorods and core/shell InGaN/GaN QWs nanowire array [20–26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20–26].…”

Section: Resultsmentioning

confidence: 74%

“…It was worth noting that the detector fabricated in this work exhibited better detecting performance compared to references, such as single InGaN/GaN QWs nanowire, ZnO nanowire array, TiO 2 nanowire array, GaN nanowire array, GaN/ZnO nanorods and core/shell InGaN/GaN QWs nanowire array [20–26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20–26]. In addition, the InGaN/GaN nanorods array photodetector could detect UV light with faster response/recover time than ZnO nanowire array, TiO 2 nanowire array and single InGaN/GaN QWs nanowire [23–26].…”

Section: Resultsmentioning

confidence: 78%

“…It can be seen that the photocurrent can be rapidly and consistently switched between 'Off' and 'On' states at 0.5 V bias. The response time t r is defined as the rising time from 0 to 90% of maximum photocurrent that <0.2 s (beyond the resolution of the instrument), and the decay time t d , which defined as falling time from 100 to 10% of maximum photocurrent that measured as 0.4 s. It indicated that the response/ [20][21][22][23][24][25][26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20][21][22][23][24][25][26].…”

Section: Spectral Photoresponse Of Ingan/gan Nanorods Arraymentioning

confidence: 99%

“…The response time t r is defined as the rising time from 0 to 90% of maximum photocurrent that <0.2 s (beyond the resolution of the instrument), and the decay time t d , which defined as falling time from 100 to 10% of maximum photocurrent that measured as 0.4 s. It indicated that the response/ [20][21][22][23][24][25][26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20][21][22][23][24][25][26]. In addition, the InGaN/GaN nanorods array photodetector could detect UV light with faster response/recover time than ZnO nanowire array, TiO 2 nanowire array and single InGaN/GaN QWs nanowire [23][24][25][26].…”

Section: Spectral Photoresponse Of Ingan/gan Nanorods Arraymentioning

confidence: 99%

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Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector

Kang

Wang

et al. 2018

Micro & Nano Letters

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Vertically aligned InGaN/GaN nanorod arrays with multiple quantum wells (MQWs) was prepared via inductively coupled plasma (ICP) followed by a further anisotropic wet etching method. It was demonstrated that the sizes of nanorods could be easily regulated in the ranges of 330-1090 nm by simply controlling the ICP etch parameters. The morphology characterisation results indicated that these nanorods are of straight and smooth appearance, and the length of nanorods is about 4 μm. Ultraviolet (UV) detectors based on nanorods arrays with different diameters were fabricated, which exhibited fast response/recovery speed and good response. The UV detecting performance was getting better with the decrease of nanorods diameter, which may be caused by the suppression of the dark current. This work provides an efficient route for fabricating the large-scale vertical aligned MQWs nanorods array and developing their fascinating applications.

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Section: Resultsmentioning

confidence: 74%

Section: Resultsmentioning

confidence: 78%

Section: Spectral Photoresponse Of Ingan/gan Nanorods Arraymentioning

confidence: 99%

Section: Spectral Photoresponse Of Ingan/gan Nanorods Arraymentioning

confidence: 99%

See 2 more Smart Citations

Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector

Kang

Wang

et al. 2018

Micro & Nano Letters

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“…The responsivity of n-ZnO/p-GaN can be improved by adding an intrinsic layer in between n type and p type material. At 2015, Lichun et al conducted a study on optoelectronics characteristics of UV photodetectors based on n-ZnO/i-ZnO/p-GaN structure [12]. The carriers generated outside the depletion region or active area does not contributes any photocurrent.…”

Section: B Responsivity Of N-zno/i-zno/p-gan Heterojunction Photodetmentioning

confidence: 99%

A Highly Sensitive Heterojunction Photodetector for UV Application

Jose¹,

Ravindran²,

Nair³

2016

IJERT

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ZnO is considered as the most eminent semiconductors in the metal-oxide family because of its supreme properties which tempt many researcher groups to use this material for UV detection applications. In the earlier days, ZnSe and GaN based technologies create remarkable advance in the blue and UV LEDs and injection laser. Undoubtedly, GaN is considered to be the suitable candidate for optoelectronic devices fabrication.The effectiveness of photodetector is measured in terms of responsivity. The responsivity of n-ZnO/p-GaN is 0.678 mA/W at zero bias condition was reported, which can be improved by adding an intrinsic layer in between ZnO and GaN. At zero bias voltage, the peak responsivity of n-ZnO/i-ZnO/p-GaN heterojunction photodetector was 138.9 mA/W at 362 nm under the front illumination condition. This responsivity is still lower for various sensing and military applications. The responsivity of n-ZnO/i-ZnO/p-GaN heterojunction photodetector can be further improved by adding a SiO2 layer in between p-GaN and i-ZnO. The insertion of SiO2 layer reduces the visible response and boost the UV response. It is very important in many application such as whenever it is desirable to detect UV in visible and IR background. The n-Zno/i-ZnO/SiO2/p-GaN is a perfect structure for solar blind detector. By adding SiO2 layer the responsivity can be improved to 172.7 mA/W at 362 nm. This analysis is done by using TCAD tool.

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Simulation of the Electric Properties of a Structure Based on Two Gan P-N Junctions Grown on an Undoped ZnO Nanosheet

Allam

Boudaoud

Benahmed

et al. 2020

Lecture Notes in Networks and Systems

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Optoelectronic characteristics of UV photodetector based on GaN/ZnO nanorods p-i-n heterostructures

Cited by 33 publications

References 26 publications

Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector

Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector

A Highly Sensitive Heterojunction Photodetector for UV Application

Simulation of the Electric Properties of a Structure Based on Two Gan P-N Junctions Grown on an Undoped ZnO Nanosheet

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