Orbital-active Dirac materials from the symmetry principle

Xu, Shenglong; Wu, Congjun

doi:10.1007/s44214-022-00025-7

Cited by 4 publications

(2 citation statements)

References 48 publications

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“…This lattice is composed of two identical sublattices, A and B, with each site accommodating two distinct orbitals. Taking into account 2 ), which correspond to the same 2D irreducible representation 30 .…”

Section: Tb Hamiltonian Of the Bilayer 2d Qahimentioning

confidence: 99%

“…Beside the MBT materials, there have been immense works on two-dimensional (2D) quantum anomalous Hall insulators (QAHIs) featured by the presence of Berry curvature monopoles and chiral edge states within a monolayer [22][23][24][25][26][27][28] . One notable subgroup within this category is the ferromagnetic orbital-active Dirac materials, in which the spin-orbit coupling (SOC) effect induces a topologically nontrivial band gap 29,30 . The low-energy effective model of these materials can be described by the Haldane model 4 .…”

Section: Introductionmentioning

confidence: 99%

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Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Zhao,

Liu,

et al. 2023

Preprint

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Layer Hall effect (LHE) initially discovered in the magnetic topological insulator MnBi2Te4 film expands the Hall effect family and opens a promising avenue for layertronics applications. In this study, we present an innovative ferroelectric bilayer model to attain a tunable quantum anomalous layer Hall effect (QALHE). This model comprises two ferromagnetic orbital-active Dirac monolayers stacked antiferromagnetically, accompanied by out-of-plane electric polarization. The interplay between the layer-locked Berry curvature and the intrinsic out-of-plane electric polarization leads to layer-polarized near-quantized anomalous Hall conductance. Using first-principles calculations, we have identified a promising material for this model, namely FeS bilayer. Our calculations demonstrate that the intrinsic out-of-plane electric polarization in the Bernal-stacked FeS bilayer can induce QALHE by regulating the layer-locked Berry curvature of FeS monolayers. Importantly, the intrinsic electric filed can be reversed through interlayer sliding. The discovery of ferroelectrically modulated QALHE paves the way for the integrability and non-volatility of layertronics, offering exciting prospects for future applications.

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Section: Tb Hamiltonian Of the Bilayer 2d Qahimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Zhao,

Liu,

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

Three-Dimensional Multiorbital Flat Band Models and Materials

Duan,

Cui,

Wang

et al. 2024

Nano Lett.

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Flat band (FB) systems are essential for uncovering exotic quantum phenomena associated with strong electron correlations. Here we present a systematic theoretical framework for constructing multiorbital FB models and identifying feasible material candidates. This framework integrates group theory and crystallography into a symmetry-adapted tight-binding model incorporating lattice, site, and orbital degrees of freedom. Using this approach, we unveil a novel three-dimensional (3D) multiorbital FB model in the face-centered-cubic lattice, distinct from well-known single-orbital Lieb and kagome models. Critically, we identify numerous highquality binary materials with ultraclean 3D FBs near the Fermi level. Furthermore, we explore diverse orbital bases within this model and extend our analysis to other cubic lattices with different space groups, broadening the scope for realizing 3D multiorbital FB systems. Our findings provide a foundational platform for exploring correlated physics in multiorbital FB systems and guiding the discovery of new quantum materials.

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Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Liu,

Ma,

et al. 2024

npj Comput Mater

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Layer Hall effect (LHE), initially discovered in the magnetic topological insulator MnBi2Te4 film, expands the Hall effect family and opens a promising avenue for layertronics applications. In this study, we present an innovative ferroelectric bilayer model to attain a tunable quantum anomalous layer Hall effect (QALHE). This model comprises two ferromagnetic orbital-active Dirac monolayers stacked antiferromagnetically, accompanied by out-of-plane electric polarization. The interplay between the layer-locked Berry curvature monopoles and the intrinsic out-of-plane electric polarization leads to layer-polarized near-quantized anomalous Hall conductance. Using first-principles calculations, we have identified a promising material for this model, namely FeS bilayer. Our calculations demonstrate that the intrinsic out-of-plane electric polarization in the Bernal-stacked FeS bilayer can induce QALHE by regulating the layer-locked Berry curvature of FeS monolayers. Importantly, the intrinsic electric field can be reversed through interlayer sliding. The discovery of ferroelectrically modulated QALHE paves the way for the integrability and non-volatility of layertronics, offering exciting prospects for future applications.

show abstract

Orbital-active Dirac materials from the symmetry principle

Cited by 4 publications

References 48 publications

Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Three-Dimensional Multiorbital Flat Band Models and Materials

Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

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