Order-Parameter Dependence of Spontaneous Electron Accumulation at Ga0.5In0.5P/GaAs Studied by Raman-Scattering and Photoluminescence Measurements

Abstract

Ordering dependence of carrier lifetimes and ordered states of Ga 0.52 In 0.48 P/GaAs with degree of order 0.55Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system Nondestructive evaluation of carrier concentration in the channel layer of In 0.5 Ga 0.5 P/In 0.2 Ga 0.8 As/GaAs heterostructure field-effect transistors by Raman scattering Abstract. We have investigated spontaneously accumulated two-dimensional electrons at the long-range ordered Ga 0.5 In 0.5 P/GaAs interface as a function of the order parameter. Raman-scattering and photoluminescence measurements reveal that the accumulated electron density and interface built-in electric field depend systematically on the order parameter. These results agree well with self-consistent calculations taking into account electronic band structure with the two-dimensional electrons.