Ordered Ga wires formed on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mo>−</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mi>n</mml:mi><mml:mo>:</mml:mo></mml:math>Scanning tunneling microscopy study

Wang, Junzhong; Jia, Jin‐Feng; Liu, Xi; Wei-De, Chen; Xue, Qi‐Kun

doi:10.1103/physrevb.65.235303

Cited by 27 publications

(23 citation statements)

References 36 publications

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“…This behavior confirms the expectation (Eq. (2) ) that the interactions between the vacancy lines are dipolar in nature [27]. The parameters of the linear fits shown in Fig.…”

Section: Vacancy Lines On the Ge-covered Si(001) Surfacementioning

confidence: 99%

“…As more studies would probably become available for various types of vacancy lines in the near future, it is worth pointing out that a good test for their total-energy convergence is to check that the line energies λ can be fitted well with the inverse-square power law given by Eq. (2). Such a test would also indicate whether or not the chosen thickness of the computational slab is sufficient.…”

Section: +2-dvmentioning

confidence: 99%

“…In the early stages of growth, the surface changes its reconstruction from the 2 × 1 structure to a 2 × N pattern, which consists of an array of long, parallel lines of dimer vacancies. It has recently been shown that the 2 × N reconstruction can be an excellent template for the nanofabrication of 1-dimensional structures with unique electronic transport behavior [1,2,3]. At later stages of growth, the film breaks up into pyramidal islands (quantum dots); controlling the size, spatial distribution and electronic properties of these quantum dots represent key issues for the practical applications of the heteroepitaxial growth on Si(001).…”

Section: Introductionmentioning

confidence: 99%

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Comparative study of dimer-vacancies and dimer-vacancy lines on Si() and Ge()

2004

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Although the clean Si(001) and Ge(001) surfaces are very similar, experiments to date have shown that dimer-vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(001), but not on Ge(001). In this paper, we perform empiricalpotential calculations aimed at understanding the differences between the vacancies on Si(001) and Ge(001). We identify three energetic parameters which characterize the DVs on the two surfaces: the formation energy of single DVs, the attraction between two DVs in adjacent dimer rows, and the strain sensitivity of the formation energy of DVs and VLs. At the empirical level of treatment of the atomic interactions (Tersoff potentials), all three parameters are favorable for the self-assembly of DVs on the Si(001) surface, but not on Ge(001). The most significant difference between the defects on Si(001) and on Ge(001) concerns the formation energy of single DVs, which is three times larger in the latter case. By calculating the straindependent formation energies of DVs and VLs, we propose that the experimental observation of self-assembly of vacancies on clean Ge(001) could be achieved by applying compressive strains of the order of 2%.

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“…This behavior confirms the expectation (Eq. (2) ) that the interactions between the vacancy lines are dipolar in nature [27]. The parameters of the linear fits shown in Fig.…”

Section: Vacancy Lines On the Ge-covered Si(001) Surfacementioning

confidence: 99%

Section: +2-dvmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Comparative study of dimer-vacancies and dimer-vacancy lines on Si() and Ge()

2004

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“…A quick survey of the literature provides us with numerous examples: Mg/Si(557) 59 , Si/Si(001) 60 , Mn/Si(001) [61][62][63][64][65] , CoSi 2 /Si 66 , Ga/Si(001) [67][68][69][70] , Sr/Si(111) 71 and Sr/Si(001) 72 , Ag+Au/Si(557), 44 Ir/Si(001) 73 , and so on.…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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“…[4] and references therein) and the rare-earth (RE) metals ( [5,6,7,8] and references therein). The Si(111) surface has threefold symmetry and is not as favourable a host to nanorod growth.…”

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confidence: 99%

STM andab initiostudy of holmium nanowires on a Ge(111) surface

et al. 2006

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A nanorod structure has been observed on the Ho/Ge(111) surface using scanning tunneling microscopy (STM). The rods do not require patterning of the surface or defects such as step edges in order to grow as is the case for nanorods on Si(111). At low holmium coverage the nanorods exist as isolated nanostructures while at high coverage they form a periodic 5×1 structure. We propose a structural model for the 5×1 unit cell and show using an ab initio calculation that the STM profile of our model structure compares favourably to that obtained experimentally for both filled and empty states sampling. The calculated local density of states shows that the nanorod is metallic in character.

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Ordered Ga wires formed onSi(100)−2×n:Scanning tunneling microscopy study

Cited by 27 publications

References 36 publications

Comparative study of dimer-vacancies and dimer-vacancy lines on Si() and Ge()

Comparative study of dimer-vacancies and dimer-vacancy lines on Si() and Ge()

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

STM andab initiostudy of holmium nanowires on a Ge(111) surface

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