Organic Based Flexible Transistors and Electronic Device

Abstract

The Phase I materials development effort was highly productive with the proposed Phase I milestones accomplished or exceeded. The results of Phase I have successfully demonstrated that an air-stable, high mobility n-type organic material can be synthesized and integrated into a process to form an organic CMOS process. Phase I has further demonstrated effective solutions to the challenges that are generally associated with such integration, including the development of an appropriate dielectric and electrode which are compatible with p-type materials as well. Major accomplishments were: 1. N-Type molecular semiconductors "* Synthesized carbonyl-containing oligothiophenes "* Fully characterized new compounds, films "* TFT fabrication, evaluation, ji-2 cm 2 /Vs (a record) and Ion:Ioff-109 2. Solution-processable n-type semiconductors "• Synthesized new polythiophenes "• Fully characterized new materials "* TFT fabrication, evaluation "* Solution-processed n-type films fabricated, characterized "* TFT fabrication, evaluation, jt-0.06 cm 2 /Vs (a record) and Ion:loff-10 5 3. Gate dielectrics "• New nanoscopic dielectric materials "• Low leakage currents (< 10-8 A/cm 2), high breakdown fields (> 5 MV/cm), large gate capacitance-up to 2500 nF/cm2 ; k = 16 ((a record). "* Enabled organic CMOS technology at low voltages (< 2 V)