Organic Electroluminescent Devices With Electrochemically Deposited Polyaniline as Hole Injection Layer

Abstract

Conductive polyaniline (PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3 V, whereas that of ITO/P3HT/LiF/Al device shows 5 V.

Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

“…The performance obtained with the electrochemically synthesised layer is similar to that obtained with spin-coated PEDOT:PSS [23]. Electrochemically synthesised polyaniline doped with camphorsulfonic acid has been employed for a poly(3-hexythiophene)-based light-emitting diode [24] and also has been used as dispersant agent in a zinc-selenide quantum dot light emitting diode [25]. The layer of PANI is smooth and regular in all the cases, improving the electrical response of the device regarding the same devices in absence of this layer.…”