Organic heterojunction photodiodes exhibiting low voltage, imaging-speed photocurrent gain

Hammond, William T.; Xue, Jiangeng

doi:10.1063/1.3481407

Cited by 54 publications

(36 citation statements)

References 20 publications

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“…Light absorption efficiency (

η_{A}

, solid line) and EQE (

η_{EQE}

Section: Pm Type Broadband Organic Photodetectorsmentioning

confidence: 99%

“…All panels reproduced with permission. [42] Copyright 2010, American Institute of Physics. as a HBL, and C 60 itself can also be used to block holes due to the 1 eV highest occupied molecular orbital (HOMO) level offset between CuPc and C 60 .…”

Section: Interfacial Blocking Layersmentioning

confidence: 99%

“…[36] Inspired by this work, a series of PM type OPDs are realized during the past decades. [37][38][39][40][41][42][43][44][45][46][47] There are many efforts concentrated on the research of the working mechanisms of PM, [48][49][50][51][52] the improvement of device performance, [53][54][55][56][57][58][59] and the adjustment of spectral response window. [60][61][62][63][64] However, to date, a comprehensive review about PM type OPDs has not yet been published.…”

Section: Introductionmentioning

confidence: 99%

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Recent Progress on Photomultiplication Type Organic Photodetectors

Miao

Zhang

2018

Laser & Photonics Reviews

222

182

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Photodetectors as a significant unit of intelligent optoelectronic systems have stimulated immense attention from multidisciplinary areas. Photomultiplication (PM) is desirable for sensitive photodetectors with strong detection capability of weak light, which can further simplify the photo‐detection systems without pre‐amplifier circuit. For organic photodetectors (OPDs), PM phenomenon cannot be realized by utilizing the principle of avalanche effect or impact ionization as in inorganic materials, stemming from organic semiconductor materials with large exciton binding energy and disordered structure. In this review, the recent progress on PM type OPDs is comprehensively summarized from the perspective of device physics and material science. Charge tunneling injection induced by interfacial traps becomes the mainstream working mechanism for obtaining PM phenomenon. A series of PM type OPDs was achieved by utilizing interfacial blocking layer and introducing trap states into active layer or interfacial layer. The filter‐free PM type narrowband OPDs are realized by combining the concept of charge injection narrowing with the mechanism of PM. Meanwhile, further development on this hot topic is proposed and fully discussed, including multifunctional OPDs, organic–inorganic hybrid photodetectors, and photodetector systems.

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“…Light absorption efficiency (

η_{A}

, solid line) and EQE (

η_{EQE}

Section: Pm Type Broadband Organic Photodetectorsmentioning

confidence: 99%

Section: Interfacial Blocking Layersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Recent Progress on Photomultiplication Type Organic Photodetectors

Miao

Zhang

2018

Laser & Photonics Reviews

222

182

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“…[1][2][3] Recent years have witnessed numerous organic and organic/inorganic hybrid photodetectors with wide response spectrum, [4][5][6][7] high external quantum effi ciency (EQE), [7][8][9][10][11][12] low dark current density, [ 4,[13][14][15] as well as fast response time, [ 16,17 ] fabricated either by vacuum evaporation or solution processing.…”

Section: Doi: 101002/adom201500224mentioning

confidence: 99%

Extremely Low Dark Current, High Responsivity, All‐Polymer Photodetectors with Spectral Response from 300 nm to 1000 nm

Zhou

Yang

2015

Advanced Optical Materials

133

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COMMUNICATIONbetter organic photodetector performance could be achieved if a low dark current density and a high EQE can be reached at the same time.In this paper, we present the fabrication and characterization of an all polymer photodetector sensing from 300 nm to 1000 nm with a calculated peak detectivity greater than 1.0 × 10 13 Jones in the NIR region, on the basis of the shot noise limit. The device also shows a respectable EQE of 27.7% at a wavelength of 850 nm under −0.5 V bias. Importantly, the dark current density is as extremely low as 0.64 nA cm −2 , which should be the best result among all wide spectrum response organic photodetectors reported so far. It can be seen that introducing a thin cross-linkable hole transporting/electron blocking layer greatly reduces the dark current density, while simultaneously preserving the photoresponse.A low-bandgap diketopyrrolopyrrole (DPP)-based polymer poly(diketopyrrolopyrrole-terthiophene) (PDPP3T), as shown in Figure 1 a, is utilized as the donor material, which has proven to be a promising candidate for organic fi eld-effect transistors (OFETs) and organic solar cells. [21][22][23][24] This polymer possesses a narrow-bandgap of 1.3 eV and nearly balanced hole and electron mobilities of 0.04 and 0.01 cm 2 V −1 s −1 . [ 21 ] As shown, it is able to cover the UV/visible/NIR spectral region and outputs a high photoresponse when incorporated with a (6,6)-phenyl-C71-butyric acid methyl ester (PC 71 BM) acceptor.Poly[ N , N ′-bis(4-butylphenyl)-N , N ′-bis(phenyl)-benzidine] (poly-TPD) is an effi cient hole transport material with a hole mobility of about 2.0 × 10 −3 cm 2 V −1 s −1 and has been widely used in polymer/quantum dot light emitting diodes as hole transporting layer due to its resistance to nonpolar organic solvents, such as toluene and p-xylene. [25][26][27] As reported, poly-TPD is also cross-linkable under 254 nm UV light exposure, [ 28 ] which is favorable to multilayer solution processing even with polar solvent, such as chloroform (CF) and o-dichlorobenzene ( o-DCB). In our devices, the cross-linked polymer is used as a buffer layer to collect the photogenerated holes and block the electron injection from the indium tin oxide (ITO) anode to the active layer under reverse bias.To verify the resistance of cross-linked poly-TPD fi lm to polar solvent, the absorption measurements were carried out for the poly-TPD fi lms deposited on fused silica substrates, both with and without UV irradiation. Prior to testing, the fi lms were washed by spin coating with o-DCB solvent and then dried on a hotplate. As shown in Figure 2 , after washing, the absorption remains as high as 92% for the UV light treated fi lm, while the value for the untreated fi lm is only 9.7%. The results suggest that poly-TPD fi lm gets cross-linked and shows excellent polar solvent resistivity after UV light exposure.

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“…If a new type of PD is fabricated by using an organic material as the hole transporting layer and MgZnO as the electron transporting layer, the PDs can combine the high hole mobility of organic materials with the high electron mobility of inorganic semiconductors. To date, there are some reports about MgZnO PDs [6,13] and organic PDs [14][15][16][17], but no photodiode based on MgZnO thin films and organic materials has been reported.…”

mentioning

confidence: 99%

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

Hu¹,

Li²,

Zhu³

et al. 2012

Opt. Lett.

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An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33 mW/cm2. The device showed a low dark current of about 3×10(-10) A and a high photo-dark current ratio of 1×10(5) at -2 V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192 A/W at the bias of -1 V.

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Organic heterojunction photodiodes exhibiting low voltage, imaging-speed photocurrent gain

Abstract: A near infrared organic photodiode with gain at low bias voltage Appl. Phys. Lett. 95, 263302 (2009); 10.1063/1.3279133 Energy losing rate and open-circuit voltage analysis of organic solar cells based on detailed photocurrent simulation

Cited by 54 publications

References 20 publications

Recent Progress on Photomultiplication Type Organic Photodetectors

Recent Progress on Photomultiplication Type Organic Photodetectors

Extremely Low Dark Current, High Responsivity, All‐Polymer Photodetectors with Spectral Response from 300 nm to 1000 nm

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

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