Organic non-volatile memory devices based on a ferroelectric polymer

Abstract

Organic based FeFETs have been studied using current voltage measurements. Evidence is presented supporting the idea that, during the application of a sequence of poling cycles, electrons become permanently fixed at the insulator/semiconductor interface probably trapped on the positively charged surfaces of ferroelectrically polarized poly(vi nylidenefluoride-trifluoroethylene) (P(VDF-TrFE» crystalites at the interface.