Organic Single Crystals: An Essential Step to New Physics and Higher Performances of Optoelectronic Devices

Fraleoni‐Morgera, Alessandro; Geerts, Yves; Morpurgo, Alberto F.; Podzorov, Vitaly

doi:10.1002/adfm.201504924

Cited by 34 publications

(17 citation statements)

References 55 publications

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“…Organic single-crystal deposition is predominantly different from the growth of inorganic counterparts and offers the potential of low-temperature, large-scale device fabrication using solution progressing of molecular semiconductor ‘inks' for high-performance, organic-printed electronic devices. Despite significant efforts devoted to the development of a scalable printing method to fabricate OSSCs9, reported processes are either material1011 or substrate12 specific, limiting widespread application.…”

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confidence: 99%

Spray printing of organic semiconducting single crystals

et al. 2016

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Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

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confidence: 99%

Spray printing of organic semiconducting single crystals

et al. 2016

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“…Wang, Dong, Hu, Liu, & Zhu, 2012). The estimation of active material with small molecules in OFETs by their field-effect mobilities results in superior performance and optimized mobility of single-crystal OFETs with the absence of grain boundaries and molecular disorders (Fraboni, Fraleoni-Morgera, Geerts, Morpurgo, & Podzorov, 2016;Hasegawa & Takeya, 2008). Although high charge carrier mobility of OFETs improved them significantly, there are still some miss understanding especially about the nanoscale patterns covering surface due to their optimized microelectronic structure (Minemawari et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

The evaluation of surface topography changes in nanoscaled 2,6‐diphenyl anthracene thin films by atomic force microscopy

Ţălu

Solaymani

Rezaee

et al. 2020

Microscopy Res & Technique

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The physical properties of electronic devices made by 2,6-diphenyl anthracene (DPA) are influenced by the microtexture of DPA surfaces. This work focused on the experimental investigation of the 3-D surface microtexture of DPA thin films deposited on OTS (octadecyltrichlorosilane), HMDS (Hexamethyldisilasane), OTMS (octadecyltrimethoxysilane), and Si/SiO 2 (300 nm SiO 2 thickness) substrates with 5 and 50 nm thicknesses and 5 and 10 μm scan size. The thin film surfaces were recorded using atomic force microscopy (AFM) and their images were stereometrically analyzed to obtain statistical parameters, in accordance with ASME B46.1-2009 and ISO 25178-2: 2012. The results showed the effect of different manufacturing parameters on microtexture values where the granular structure is confirmed in all films. In addition, root mean square is increased by increasing the thickness from 5 to 50 nm for all types of substrates.

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“…Various strategies have been used to prepare organic semiconducting wires, including an ink-jet method 7 , 8 , electro-spinning 9 , hard 10 – 12 and soft template tools 13 – 15 , self-assembly in solution 16 – 19 and physical vapor transport 20 , 21 . The excellent charge-carrier mobilities were obtained for self-assembled single crystals of organic semiconductors, because their closely assembled structures by intermolecular interactions enable electrons to move efficiently through a conjugated backbone plane 16 , 22 .…”

Section: Introductionmentioning

confidence: 99%

Thienoisoindigo-Based Semiconductor Nanowires Assembled with 2-Bromobenzaldehyde via Both Halogen and Chalcogen Bonding

Noh

Jung

Koo

et al. 2018

Sci Rep

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We fabricated nanowires of a conjugated oligomer and applied them to organic field-effect transistors (OFETs). The supramolecular assemblies of a thienoisoindigo-based small molecular organic semiconductor (TIIG-Bz) were prepared by co-precipitation with 2-bromobenzaldehyde (2-BBA) via a combination of halogen bonding (XB) between the bromide in 2-BBA and electron-donor groups in TIIG-Bz, and chalcogen bonding (CB) between the aldehyde in 2-BBA and sulfur in TIIG-Bz. It was found that 2-BBA could be incorporated into the conjugated planes of TIIG-Bz via XB and CB pairs, thereby increasing the π − π stacking area between the conjugated planes. As a result, the driving force for one-dimensional growth of the supramolecular assemblies via π − π stacking was significantly enhanced. TIIG-Bz/2-BBA nanowires were used to fabricate OFETs, showing significantly enhanced charge transfer mobility compared to OFETs based on pure TIIG-Bz thin films and nanowires, which demonstrates the benefit of nanowire fabrication using 2-BBA.

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Organic Single Crystals: An Essential Step to New Physics and Higher Performances of Optoelectronic Devices

Cited by 34 publications

References 55 publications

Spray printing of organic semiconducting single crystals

Spray printing of organic semiconducting single crystals

The evaluation of surface topography changes in nanoscaled 2,6‐diphenyl anthracene thin films by atomic force microscopy

Thienoisoindigo-Based Semiconductor Nanowires Assembled with 2-Bromobenzaldehyde via Both Halogen and Chalcogen Bonding

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