Organic transistors on paper: a brief review

Zschieschang, Ute; Klauk, Hagen

doi:10.1039/c9tc00793h

Cited by 98 publications

(72 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Methods under development for printed electronics include inkjet, spray, gravure, flexographic, and screen printing. Progress in developing printed electronics can be found in several reviews . Common metallic materials used for printing are nanoparticles dispersed in organic solutions, which often are sintered at temperatures above 100 °C or by laser heating to remove ligands and increase conductivity .…”

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

238

261

View full text Add to dashboard Cite

Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

show abstract

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

238

261

View full text Add to dashboard Cite

show abstract

“…As suggested in ref. 8 , in order to avoid any mobility overestimation, the capacitance was measured under quasi-static conditions (details about the quasi-static capacitance measurement and setup are reported in Supplementary Note 3). To this purpose, parallel plate capacitor structures, in which hBN is sandwiched between silver bottom/top electrodes were fabricated and tested (see Methods).…”

Section: Electrical Characterization Of Mos 2 Fetsmentioning

confidence: 99%

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

et al. 2020

View full text Add to dashboard Cite

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

show abstract

“…Derived from abundant and renewable raw materials, and thanks to their outstanding physical, chemical, and mechanical properties, cellulose nanofibers (CNFs) represent one of the most promising components for the production of sustainable, biodegradable, and eco‐friendly electronics 6–8. However, most of the works reported so far address the use of these materials just as substrates for functional electronic components 9. Nevertheless, CNFs can work as both substrates and active components for the fabrication of devices and sensors 10–13.…”

Section: Introductionmentioning

confidence: 99%

Nanopaper‐Based Organic Inkjet‐Printed Diodes

Conti

Martínez‐Domingo

Lay

et al. 2020

Adv Materials Technologies

View full text Add to dashboard Cite

The rise of internet of things (IoTs) applications has led to the development of a new generation of light‐weight, flexible, and cost‐effective electronics. These devices and sensors have to be simultaneously easily replaceable and disposable while being environmentally sustainable. Thus, the introduction of new functionalized materials with mechanical flexibility that can be processed using large‐area and facile fabrication methods (as, for example, printing technologies) has become a matter of great interest in the scientific community. In this context, cellulose nanofibers (CNFs) are renewable, affordable, robust, and nontoxic materials that are rapidly emerging as components for eco‐friendly electronics. Their combination with conductive polymers (CPs) to obtain conductive nanopapers (CNPs) allows moving their functionality from just substrates to active components of the device. In this work, a route for the inkjet‐printing of organic diodes is outlined. The proposed strategy is based on the use of CNPs as both substrates and bottom electrodes onto which insulator and organic semiconducting layers are deposited to fabricate novel diode structures. Remarkable rectification ratios of up to 1.2 × 103 at |3 V| and a current density up to 5.1 µA cm−2 are achieved. As a proof‐of‐concept of the potentiality of the approach for versatile, low‐temperature, and disposable sensing applications, an NO2 gas sensor is presented.

show abstract

Organic transistors on paper: a brief review

Cited by 98 publications

References 51 publications

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Nanopaper‐Based Organic Inkjet‐Printed Diodes

Contact Info

Product

Resources

About