Origin and consequences of the compensation (Meyer-Neldel) law

Yelon, A.; Movaghar, B.; Branz, Howard M.

doi:10.1103/physrevb.46.12244

Cited by 284 publications

(188 citation statements)

References 30 publications

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“…48 It has been, however, also argued that T MN originates from multiexitation process in general. 49,50 Contact effect is sometimes important in two-probe organic transistors. Contact resistance of DMDCNQI transistors has been estimated to be 100 k cm by the transfer line method, 40 and is much smaller than the channel resistance which amounts to more than 1000 k cm.…”

Section: Variable Temperature Characteristicsmentioning

confidence: 99%

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

et al. 2013

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We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical VG above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

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Section: Variable Temperature Characteristicsmentioning

confidence: 99%

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

et al. 2013

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“…(6)) is large with respect to the excitation energy (i.e., phonon energy). 37 By fitting the data points presented in Fig. 6 an isokinetic temperature T iso of 283 K (¼ 1=ðk Á 24:4 meVÞ) is obtained.…”

Section: Discussionmentioning

confidence: 99%

“…A consequence of the MN rule is that the entropy can be written to be proportional to DH such that Eq. (5) expresses as 36,37 …”

Section: Discussionmentioning

confidence: 99%

Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers

Weiss

Redinger

Rey

et al. 2016

Journal of Applied Physics

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Reported growth processes for kesterite absorber layers generally rely on a sequential process including a final high temperature annealing step. However, the impact and details for this annealing process vary among literature reports and little is known on its impact on electrical properties of the absorber. We used kesterite absorber layers prepared by a high temperature coevaporation process to explicitly study the impact of two different annealing processes. From electrical characterization it is found that the annealing process incorporates a detrimental deep defect distribution. On the other hand, the doping density could be reduced leading to a better collection and a higher short circuit current density. The activation energy of the doping acceptor was studied with admittance spectroscopy and showed Meyer-Neldel behaviour. This indicates that the entropy significantly contributes to the activation energy. Published by AIP Publishing.

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“…19 It would be required the accumulation or annihilation of a large number of excitations for a kinetic event to take place. In spite of that the MN rule is generally observed in disordered systems where processes involve multiple excitations, 20 for instance, carrier capture or emission in deep levels, 21 in a recent paper Yelon 22 claimed that it is extremely unlikely that T mn values represent a measure of disorder, increasing with it. Instead, virtually all solid-state phenomena give values of kT mn that can be associated to the typical phonon energies.…”

Section: -2mentioning

confidence: 99%

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Perez

Castán

García

et al. 2015

Applied Physics Letters

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In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.

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Origin and consequences of the compensation (Meyer-Neldel) law

Cited by 284 publications

References 30 publications

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

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