Origin of a Nanoindentation Pop-in Event in Silicon Crystal

Abram, Rafal; Chrobak, D.; Nowak, Roman

doi:10.1103/physrevlett.118.095502

Cited by 48 publications

(21 citation statements)

References 35 publications

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“…Figure 3 shows the load-depth curves of five sizes of PC thin films under a maximum indentation depth of 550 nm. Obviously, the loading tracks exhibit a pop-in phenomenon in each curve [35]. Comparing the shape of each curve, there is no pop-in event in the unloading part.…”

Section: Size-dependent Mechanical Properties Of Silica Pcsmentioning

confidence: 92%

Effects of Microsphere Size on the Mechanical Properties of Photonic Crystals

et al. 2018

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Photonic crystal (PC) thin films that are self-assembled from different-sized silica microspheres were prepared for studying mechanical properties via nanoindentation at the submicron scale. We found that the silica photonic crystals (PCs) possessed a face-centered cubic (FCC) microstructure and their elastic modulus and hardness were in the range of ~1.81–4.92 GPa and 0.008–0.033 GPa, respectively. The calculated results proved that there were size-dependent properties in the silica PCs, in that the elastic modulus and hardness increased as the diameter decreased from 538 nm to 326 nm. After studying the total work and plastic work in the progressive deformation of silica PCs during the nanoindentation tests, we developed a two-stage deformation model to explain how the microsphere size affects the mechanical properties of PC thin films. The phenomenon of “smaller is stronger” is mainly due to the energy consumption, which combines the effects of microstructure collapse, microsphere slide, and reduced porosity during the whole loading and unloading process. In addition, the results of numerical simulation matched the experimental data and reflected the energy change rules of PCs during the indentation process. Furthermore, the study affords useful guidance for constructing high-performance films with proper design and potential application in next-generation PC materials.

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Section: Size-dependent Mechanical Properties Of Silica Pcsmentioning

confidence: 92%

Effects of Microsphere Size on the Mechanical Properties of Photonic Crystals

et al. 2018

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“…Already in our previous report [19] we mentioned a number of studies on Si [40][41][42]. Research in this material is still very active as is evidenced by the large number of recent publications [43][44][45][46][47][48].…”

Section: Simentioning

confidence: 99%

“…Abrams et al [48] use the Tersoff potential [50] to understand the influence of crystalline and amorphous phase transitions in Si on the extrusion behavior on the surface. They find that formation of the crystalline Si-III phase can be identified by a pop-in in the force-depth curve which is absent under amorphization; both phase transformations lead to material extrusion to the surface.…”

Section: Simentioning

confidence: 99%

Atomistic Studies of Nanoindentation—A Review of Recent Advances

2017

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This review covers areas where our understanding of the mechanisms underlying nanoindentation has been increased by atomistic studies of the nanoindentation process. While such studies have been performed now for more than 20 years, recent investigations have demonstrated that the peculiar features of nanoplasticity generated during indentation can be analyzed in considerable detail by this technique. Topics covered include: nucleation of dislocations in ideal crystals, effect of surface orientation, effect of crystallography (fcc, bcc, hcp), effect of surface and bulk damage on plasticity, nanocrystalline samples, and multiple (sequential) indentation. In addition we discuss related features, such as the influence of tip geometry on the indentation and the role of adhesive forces, and how pre-existing plasticity affects nanoindentation.

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“…С развитием нанотехнологий значительное внимание уделяется исследованию изменения свойств поверхности кристаллических материалов, которое осуществляется путем наноиндентирования, т. е. вдавливанием твердого тонкого зонда (индентора) на глубину в несколько нм [1,2]. Моделированию этого процесса с помощью молекулярной динамики (МД) в таких полупроводниковых материалах, как кремний, германий и арсенид галлия, посвящен ряд работ (см., например, [3][4][5][6][7]). При этом обнаружено, что в этих полупроводниковых материалах наноиндентирование вызывает формирование новых фазовых кристаллических состояний в деформированной области на глубине в несколько атомных слоев от поверхности.…”

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“…При этом обнаружено, что в этих полупроводниковых материалах наноиндентирование вызывает формирование новых фазовых кристаллических состояний в деформированной области на глубине в несколько атомных слоев от поверхности. Эти фазы в Ge [3] и Si [4,5] сохранялись и после отвода зонда от соприкосновения с поверхностью материала при не слишком высоких температурах, в то время как в GaAs формирование фазы было обратимым, несмотря на то что моделирование проводилось при температуре, близкой к 0 K [6,7]. Влияние наноиндентирования на реконструкцию поверхности ранее не исследовалось.…”

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