Origin of chromatic delay in electroluminescent diodes

Míšek, Jiří; Kučera, Ĺuboš; Šrobár, F.; Kortán, J

doi:10.1016/0038-1101(77)90117-4

Cited by 5 publications

(5 citation statements)

References 2 publications

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“…Figure 2 shows the pressure dependence of e xyz (0) for all compounds considered. We have a negative value of pressure coefficients of refractive index, in good agreement with previous calculations [4] and experiments [5].…”

Section: Resultssupporting

confidence: 92%

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

Abbar

Bouhafs

Aourag

et al. 2001

phys. stat. sol. (b)

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We present first-principles full-potential linearized augmented plane wave calculations of the effect of hydrostatic pressure on the optical properties of wurtzite GaN, InN and AlN compounds. The refractive index and its variation with hydrostatic pressure are well described. The accurate calculation of linear optical function (refraction index and its pressure derivative, and both imaginary and real parts of dielectric function) is performed in the photon energy range up to 30 eV. The predicted optical constant agrees well with the available experimental data.

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Section: Resultssupporting

confidence: 92%

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

Abbar

Bouhafs

Aourag

et al. 2001

phys. stat. sol. (b)

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“…GaN 0.15 [30] 5.70 [31] 90.63 [35] 68.32 [35] 3.30 [30] InN 0.10 [36] 8.40 [33] 72.66 [34] 58.52 [34] 1.94 [30] The results are consistent with those in previous works. [4,7,38] We also illustrate the curves of cyclotron frequency of magnetopolarons ω * c versus well width d for a given magnetic field in Fig.…”

Section: Methodssupporting

confidence: 92%

“…GaN 0.15 [30] 5.70 [31] 90.63 [35] 68.32 [35] 3.30 [30] InN 0.10 [36] 8.40 [33] 72.66 [34] 58.52 [34] 1.94 [30] Curves of cyclotron mass of magnetopolarons versus magnetic field B in specified wurtzite In 0.19 Ga 0.81 N/GaN QW with (dot lines) and without a BEF (solid lines), and in zinc-blende QW (dashed dot lines). Here, d is chosen to be 15 nm.…”

Section: Methodsmentioning

confidence: 99%

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Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In _x Ga _{1−
x} N/GaN quantum well

Zhao¹,

Mei²

2012

Chinese Phys. B

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The cyclotron mass of magnetopolarons in wurtzite InxGa 1−x N/GaN quantum well is studied in the presence of an external magnetic field by using the Larsen perturbation method. The effects of the built-in electric field and different phonon modes including interface, confined and half-space phonon modes are considered in our calculation. The results for a zinc-blende quantum well are also given for comparison. It is found that the main contribution to the transition energy comes from half-space and interface phonon modes when the well width is very small while the confined modes play a more important role in a wider well due to the location of the electron wave function. As the well width increases, the cyclotron mass of magnetopolarons first increases to a maximum and then decreases either with or without the built-in electric field in the wurtzite structure and the built-in electric field slightly reduces the cyclotron mass. The variation of cyclotron mass in a zinc-blende structure is similar to that in a wurtzite structure. With the increase of external magnetic field, the cyclotron mass of polarons almost linearly increases. The cyclotron frequency of magnetopolarons is also discussed.

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“…Prior to the work of Bhuiyan et al [5], there had been a number of general nitride review articles that included short mention of indium nitride work. Prominent among these were reviews by Fremunt et al [6], Misek and Srobar [7], Davis [8], Strite and Morkoc [9], and the early defect reviews by Tansley and Egan [10,11]. In 1994 and again in 1999 there were also a number of InN-specific-topic reviews published by the IEE [12][13][14][15][16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

InN, latest development and a review of the band-gap controversy

Butcher

Tansley

2005

Superlattices and Microstructures

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126

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Origin of chromatic delay in electroluminescent diodes

Cited by 5 publications

References 2 publications

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In _x Ga _{1−
x} N/GaN quantum well

InN, latest development and a review of the band-gap controversy

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Origin of chromatic delay in electroluminescent diodes

Cited by 5 publications

References 2 publications

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure

Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In x Ga 1− x N/GaN quantum well

InN, latest development and a review of the band-gap controversy

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Product

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About

Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In _x Ga _{1−
x} N/GaN quantum well