2022
DOI: 10.1021/acsaelm.2c01016
|View full text |Cite
|
Sign up to set email alerts
|

Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface

Abstract: Combining the mature technology of gallium nitride (GaN) with emerging materials such as van der Waals crystals is presently an important path in applied science research. Up to now, a broad spectrum of optoelectronic devices including light emitters, photodetectors, and solar cells based on mentioned materials has been presented. Understanding and controlling the surface-related phenomena is a crucial aspect for proper electrical device operation. In particular, an insight into the impact of external conditio… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
references
References 64 publications
0
0
0
Order By: Relevance