Handbook of Semiconductor Manufacturing Technology 2017
DOI: 10.1201/9781420017663-9
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Oxidation and Gate Dielectrics

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“…The layer thickness d ε is analyzed by AES analysis. Compared with other commonly used methods [39,40], AES can provide the chemical composition information and measure the distribution of the material on the electrode in the same time [41,42]. The energy of Auger electron is analysed as the indication of a specific element atom.…”
Section: Experiments Resultsmentioning
confidence: 99%
“…The layer thickness d ε is analyzed by AES analysis. Compared with other commonly used methods [39,40], AES can provide the chemical composition information and measure the distribution of the material on the electrode in the same time [41,42]. The energy of Auger electron is analysed as the indication of a specific element atom.…”
Section: Experiments Resultsmentioning
confidence: 99%