In this study, we demonstrate that
introduction of rare-earth elements,
R = La or Pr, into the Bi–O charge reservoir layer of BiCuSeO
leads to an increase of both the charge carrier concentration and
the effective mass. Although the charge carrier mobility slightly
decreases upon Bi3+ to R3+ substitution, the
electronic transport properties are significantly improved in a broad
temperature range from 100 to 800 K. In particular, the electrical
resistivity decreases by 2 times, while the Seebeck coefficient drops
from 323 to 238 μV K–1 at 800 K. Thus, a power
factor of nearly 3 μW cm–1 K–2 is achieved for Bi0.92R0.08CuSeO samples at
800 K. Meanwhile, a noticeable decrease of the lattice thermal conductivity
is observed for the substituted samples, which can be attributed to
the enhanced point defect scattering mostly originating from atomic
mass fluctuations between R and Bi. Ultimately, a maximum zT value of nearly 0.34 at 800 K is obtained for the Bi0.92La0.08CuSeO sample, which is ∼30% higher
than that of pristine BiCuSeO.