Oxygen atom density in a large reactor powered by four inductively coupled plasma sources

Primc, Gregor; Lojen, Dane; Vesel, Alenka; Zaplotnik, Rok

doi:10.1016/j.vacuum.2022.110964

Cited by 8 publications

(2 citation statements)

References 31 publications

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“…The accuracy of this technique is about 20% when operating in E-mode plasma and about 40% in H-mode. The increased uncertainty of the probe when plasma is in the H-mode is due to stray effects caused by oxygen ions and vacuum ultraviolet radiation [28]. The measured values are 3.45 × 10 19 and 4 × 10 21 m −3 for the E and Hmodes, respectively.…”

Section: Fluence Of Neutral Oxygen Atomsmentioning

confidence: 90%

Surface Modifications of Wheat Cultivar Bologna upon Treatment with Non-Equilibrium Gaseous Plasma

Holc

Vesel

Zaplotnik

et al. 2022

Plants

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Seeds of wheat cultivar Bologna were treated with a low-pressure, inductively coupled, radio frequency oxygen plasma. E-mode and H-mode plasma at the real powers of 25 and 275 W, respectively, was used at treatment times of 0.1–300 s. Plasma affected seed surface chemistry, determined by XPS, and surface topography, visualized by SEM. The combined effects of functionalization and etching modified seed surface wettability. The water contact angle (WCA) exponentially decreased with treatment time and correlated with the product of discharge power and treatment time well. Super-hydrophilicity was seen at a few 1000 Ws, and the necessary condition was over 35 at.% of surface oxygen. Wettability also correlated well with O-atom dose, where super-hydrophilicity was seen at 1024–1025 m−2. A relatively high germination percentage was seen, up to 1000 Ws (O-atom dose 1023–1024 m−2), while seed viability remained unaffected only up to about 100 Ws. Extensively long treatments decreased germination percentage and viability.

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Section: Fluence Of Neutral Oxygen Atomsmentioning

confidence: 90%

Surface Modifications of Wheat Cultivar Bologna upon Treatment with Non-Equilibrium Gaseous Plasma

Holc

Vesel

Zaplotnik

et al. 2022

Plants

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“…The surface recombination coefficient will dictate the density of atoms in a processing chamber and, thus, the flux of atoms on the material, which should be processed with the atoms. In many practical cases, keeping the flux as constant as possible and as laterally homogeneous as possible is useful [12]. This is not always possible because of the edge effects and also because the density of atoms changes with time without changing the discharge parameters [13].…”

Section: Introductionmentioning

confidence: 99%

Recombination of oxygen atoms on the surface of oxidized polycrystalline nickel—temperature and pressure dependences

Paul

Zaplotnik

Ekar

et al. 2023

Plasma Sources Sci. Technol.

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The recombination of neutral oxygen atoms in the ground state on the oxidized nickel samples was studied experimentally in the range of pressures where the maximum density occurs in weakly ionized lowpressure oxygen plasma, i.e., between 40 and 200 Pa. The recombination coefficient was determined in the flowing afterglow. The source of oxygen atoms was plasma sustained in a quartz tube of inner diameter 4.7 mm by a microwave discharge in the surfatron mode. The recombination coefficient was determined in the afterglow chamber, which was a Pyrex tube with an inner diameter of 36 mm. The density of oxygen atoms in the afterglow chamber was adjusted by adjusting the discharge power, the gas flow, the pressure, and the position of a recombinator. Such flexibility of the experimental system enabled adjustment of the temperature of the oxidized nickel samples independently from the O-atom density in its vicinity or other parameters. The density of oxygen atoms in the afterglow chamber at various system parameters was determined by the Šorli method, which is reliable, and has an accuracy of about 20%. The recombination coefficient was determined by calorimetry. The coefficient was inversely proportional to the square root of the pressure and exponentially to the sample temperature. Systematic measurements performed at various pressures and temperatures enabled empirical formula, which were explained qualitatively by recombination kinetics.

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Thermodynamic behavior of high-power inductively coupled plasma quartz tube wall

Yang,

Li,

Bao

et al. 2024

Case Studies in Thermal Engineering

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Oxygen atom density in a large reactor powered by four inductively coupled plasma sources

Cited by 8 publications

References 31 publications

Surface Modifications of Wheat Cultivar Bologna upon Treatment with Non-Equilibrium Gaseous Plasma

Surface Modifications of Wheat Cultivar Bologna upon Treatment with Non-Equilibrium Gaseous Plasma

Recombination of oxygen atoms on the surface of oxidized polycrystalline nickel—temperature and pressure dependences

Thermodynamic behavior of high-power inductively coupled plasma quartz tube wall

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