Oxygen diffusion in silicon oxide films produced by different methods

Pérez-Bueno, J.J.; Ramı́rez-Bon, R.; Vorobiev, Yu. V.; Espinoza‐Beltrán, F.J.; González‐Hernández, J.

doi:10.1016/s0040-6090(00)01568-6

Cited by 23 publications

(13 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This dense subsurface layer becomes a diffusion barrier for the molecular oxygen and ozone and as a result the PDMS density at depths more than ≈10 nm below the surface is only ≈10% of that of pure silica. This conclusion is also supported by literature data on the diffusivity of oxygen in PDMS (typically ≈10 −5 cm 2 /s) (51) and silica (10 −12 -10 −19 cm 2 /s, depending on preparation method) (52).…”

Section: Fig 5 X-ray Reflectivity From Untreated Sylgard-184 (Open supporting

confidence: 86%

Surface Modification of Sylgard-184 Poly(dimethyl siloxane) Networks by Ultraviolet and Ultraviolet/Ozone Treatment

Efimenko

Wallace

Genzer

2002

Journal of Colloid and Interface Science

687

571

View full text Add to dashboard Cite

Section: Fig 5 X-ray Reflectivity From Untreated Sylgard-184 (Open supporting

confidence: 86%

Surface Modification of Sylgard-184 Poly(dimethyl siloxane) Networks by Ultraviolet and Ultraviolet/Ozone Treatment

Efimenko

Wallace

Genzer

2002

Journal of Colloid and Interface Science

687

571

View full text Add to dashboard Cite

“…The reflectance spectra of the samples are shown in Fig 2a. In analyzing the spectra, we take that an interference maximum is observed when [19] …”

Section: Resultsmentioning

confidence: 99%

Origin of Interference Colors on Austenitic Stainless Steel

et al. 2005

View full text Add to dashboard Cite

Data are presented on the coloring conditions, colored layer parameters, and color characteristics of stainless steel 304 samples treated in an electrolytic cell (60 Hz, 100 mV) using a mixture of 5 M sulfuric acid and 2.5 M chromic acid. Reflectance spectra indicate that the samples have high-purity color mainly in the yellow region and that the color is due to interference oscillations in the visible range. In addition, reflectance data in conjunction with composition-depth profiles obtained using glow discharge spectrometry indicate that the coloration of the samples is due not only to reflectance oscillations but also to the subtraction effect. The reduced Fe content and significant oxygen content in the near-surface region attest to the formation of a mixed oxide layer. Atomic-force microscopy examination indicates that the sample surface has an island structure.

show abstract

“…exhibit thermally activated behavior with large activation energies of 1.2-2.0 eV. 8 However, in disordered phases like amorphous silicon or GBs, the impurity diffusion constant varies according to the structure, 11 and almost zero activation energy is possible. 12 The interstitial and defect states in the GBs in our film can result in a low activation energy for impurity diffusion.…”

Section: Figmentioning

confidence: 99%

Control of grain-boundary tunneling barriers in polycrystalline silicon

Kamiya

Durrani

Ahmed

2002

Applied Physics Letters

View full text Add to dashboard Cite

The effect of oxidation and annealing on the electrical properties of grain boundaries ͑GBs͒ in heavily doped polycrystalline silicon is characterized using bulk films and 30-nm-wide nanowires. Oxidation at 650-750°C selectively oxidizes the GBs. Subsequent annealing at 1000°C increases the associated potential barrier height and resistance. These observations can be explained by structural changes in the Si-O network at the GBs and the competition between surface oxygen diffusion and oxidation from the GBs in the crystalline grains. A combination of oxidation and annealing may provide a method that can better control the GB potential barriers. © 2002 American Institute of Physics. ͓DOI: 10.1063/1.1509853͔The structural and electrical properties of polycrystalline silicon ͑poly-Si͒ thin films are of great interest in the design of ultralarge-scale integrated ͑ULSI͒ circuits and thin-film transistors for flat panel displays. 1,2 As ULSI design rules are reduced to the nanometer scale, the poly-Si microstructure can strongly influence the device characteristics. If poly-Si grains are a few tens of nanometer in size, the material is of considerable interest for the fabrication of nanometer-scale devices such as single-electron transistors. 3,4 Variation between individual grains and grain boundaries ͑GBs͒ causes nonuniformity in the electrical characteristics of different devices. It has also been reported that individual GBs have different structural and electrical properties. 5,6 Thus control of the electrical properties of GBs is vital for nanometerscale devices, in which only a few grains and GBs may exist in the active region.In this letter we discuss the effect of oxidation and thermal annealing on the electrical and structural properties of poly-Si thin films and on nanowires fabricated in these films. We observe that the film electrical conductivity ͑ ͒ decreases nonmonotonically with an increase in oxidation temperature and that a two-stage oxidation process, followed by annealing, reduces variation in the activation energy of the conductivity (E a ) and tunnel resistance (R T ) in nanowire devices. We propose that oxygen atoms are incorporated selectively into the GBs and that this effect determines the electrical characteristics.Our poly-Si film was prepared by solid-phase crystallization of 50-nm-thick amorphous silicon at 850°C for 30 min. 6 The films were doped n type to 10 20 /cm 3 using phosphorus ion implantation. Transmission electron microscopy ͑TEM͒ indicated that the grains were columnar with lateral size of 20-150 nm and that the GBs were no thicker than 1 nm. 7 The bulk film was characterized electrically using a large-area ͑100 m contact spacing͒ transmission-line mode ͑TLM͒ test structure. Nanowire structures ͑30 nm wide and 20 nm-80 nm long͒ were used to investigate the microscopic properties over a few GBs. The nanowires were defined by electron-beam lithography in polymethyl methacrylate resist, followed by reactive-ion etching ͑RIE͒ in a 1:1 plasma of SiCl 4 and CF 4 . 6 Ohmic contacts ...

show abstract

Oxygen diffusion in silicon oxide films produced by different methods

Cited by 23 publications

References 16 publications

Surface Modification of Sylgard-184 Poly(dimethyl siloxane) Networks by Ultraviolet and Ultraviolet/Ozone Treatment

Surface Modification of Sylgard-184 Poly(dimethyl siloxane) Networks by Ultraviolet and Ultraviolet/Ozone Treatment

Origin of Interference Colors on Austenitic Stainless Steel

Control of grain-boundary tunneling barriers in polycrystalline silicon

Contact Info

Product

Resources

About