The β decay of
241
Pu to
241
Am results
in a significant ingrowth of Am during the interim storage of PuO
2
. Consequently, the safe storage of the large stockpiles of
separated Pu requires an understanding of how this ingrowth affects
the chemistry of PuO
2
. This work combines density functional
theory (DFT) defect energies and empirical potential calculations
of vibrational entropies to create a point defect model to predict
how the defect chemistry of PuO
2
evolves due to the incorporation
of Am. The model predicts that Am occupies Pu sites in (Pu,Am)O
2±
x
in either the +III or +IV oxidation
state. High temperatures, low oxygen-to-metal (O/M) ratios, or low
Am concentrations favor Am in the +III oxidation state. Am (+III)
exists in (Pu,Am)O
2±
x
as the negatively
charged (Am
Pu
1–
) defect, requiring charge compensation from holes in the valence
band, thereby increasing the conductivity of the material compared
to Am-free PuO
2
. Oxygen vacancies take over as the charge
compensation mechanism at low O/M ratios. In (Pu,Am)O
2±
x
, hypo- and (negligible) hyperstoichiometry is found
to be provided by the doubly charged oxygen vacancy (V
O
2+
) and singly charged
oxygen interstitial (O
i
1–
), respectively.