P‐11.7: Optimizing Chip Sidewall Inclined Angle and Thickness for Enhanced Light Extraction Efficiency in AlGaN‐based Deep Ultraviolet Micro‐LEDs

Abstract

In this paper, we systematically optimized the p‐type layers thickness and sidewall inclined angle of flip‐chip AlGaN‐based deep ultraviolet Micro‐LEDs using finite difference time‐domain (FDTD) method, aiming to maximize light extraction efficiency (LEE). It was found that due to the reflection of electrodes, variation in the thickness of p‐AlGaN and p‐GaN causes oscillations in the light extraction efficiency, which is caused by destructive interference and constructive interference. Additionally, we found that a 40° sidewall inclination angle yields the maximum LEE, with a 40% enhancement over the vertical sidewall. These simulation results present potential avenues for improving the LEE of DUV Micro‐LEDs.