P‐13.1: An optimization scheme for conduction of VA type narrow border product

Abstract

products of VA with Narrow border can be realized through technology of Au Dot, technology of Au line, and technology of Au in seal, but technology of Au in seal cannot be combined with GOA side Bus Line Overlay because seal needs an independent field. As a result, the compression of the border is limited, and the Au Dot and Au line can Cover this limitation, but because PI liquid needs to cover the hole, PI liquid will be covered with Au Dot and Au Line conduction points, which will bring poor permeability. Therefore, a new design is developed. In the CF and TFT side of the conduction point using the cushion design into a groove, blocking PI liquid covering the conduction point, on the basis of the realization of narrow border to achieve synchronous conduction optimization.