P‐47: An OLEDoS Pixel Circuit with Extended Data Voltage Range for High Resolution Micro‐Displays

Huo, Xinxin; Liao, Congwei; Wu, Jia‐Rui; Yi, Shuiping; Wang, Ying; Jiao, Hailong; Zhang, Min; Zhang, Shengdong

doi:10.1002/sdtp.12170

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…In recent years, OLED on Silicon (OLEDoS) has gradually become the mainstream technology for virtual reality (VR) micro-display with the maturity of meta-universe or virtual reality ecosystem [1,2] . The OLED full-color technologies that have been mass-produced in the fields of large, medium and small screen display and microdisplay mainly include the following: 1,white (W)-"WOLED + CF" with color filter (CF) formed on organic light emitting diode (OLED); 2,blue (B)-"BOLED + QD color conversion" for forming Quantum Dot (QD) film layer on organic light emitting diode (OLED); 3,FMM (Fine-Metal Mask) mask evaporation; 4, IJP (Ink-Jet Printing) mode.…”

Section: Introductionmentioning

confidence: 99%

P‐214: TADF/Fluorescent Hybrid WOLED Device with Adjustable Color Temperature

Wang,

You,

Bian

et al. 2024

Symp Digest of Tech Papers

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Although the tandem WOLED have the potential of high efficiency and long lifetime, the high voltage of tandem structure usually limits its application inAR/VR products. To achieve low voltage WOLED, it is necessary to develop single structure. Most of the reported single WOLED with the use of TADF materials show a relatively large CIE coordinates. In this work, we use the combination of blue fluorescence and yellow TADF materials with a 1‐2 nm p‐type interlayer material between them. The energy is transferred from blue fluorescence to TADF. And finally, the single WOLED with tunable color temperature was realized. The CIE coordinates can be tuned from the warm white point of (0.313, 0.323) to the cold white point of (0.285, 0.279). The roll‐off of efficiency from 240 nit to 3000 nit is lower than 10%, and the lifetime (LT95) can reach 1300 h at 1000 nit.

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Section: Introductionmentioning

confidence: 99%

P‐214: TADF/Fluorescent Hybrid WOLED Device with Adjustable Color Temperature

Wang,

You,

Bian

et al. 2024

Symp Digest of Tech Papers

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“…Recently, as augmented reality and virtual reality (AR/VR) attract substantial interest, the demand for high-performance near-eye displays is increasing further [ 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. Consequently, the very high resolution OLED on silicon (OLEDoS) displays up to 4410 ppi have been reported [ 58 , 59 , 60 , 61 , 62 , 63 ].…”

Section: Introductionmentioning

confidence: 99%

Review of Capacitive Touchscreen Technologies: Overview, Research Trends, and Machine Learning Approaches

Nam

Seol

Lee

et al. 2021

Sensors

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Touchscreens have been studied and developed for a long time to provide user-friendly and intuitive interfaces on displays. This paper describes the touchscreen technologies in four categories of resistive, capacitive, acoustic wave, and optical methods. Then, it addresses the main studies of SNR improvement and stylus support on the capacitive touchscreens that have been widely adopted in most consumer electronics such as smartphones, tablet PCs, and notebook PCs. In addition, the machine learning approaches for capacitive touchscreens are explained in four applications of user identification/authentication, gesture detection, accuracy improvement, and input discrimination.

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“…In addition, several diode-connected transistors are placed as an active load to scale down the effect of the data voltage by a factor of the number of stacked transistors including a driving transistor [18]. The CD method uses two capacitors to enlarge the data voltage range [19][20][21], where a capacitor is integrated by the metal-insulator-metal (MIM) one, and the other is implemented by the parasitic gate capacitor of the driving transistor. However, these previous approaches do not address the body effect issue.…”

Section: Introductionmentioning

confidence: 99%

Body-Effect-Free OLED-on-Silicon Pixel Circuit Based on Capacitive Division to Extend Data Voltage Range

Bae

Nam

2021

Electronics

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This paper proposes an OLED pixel compensation circuit that copes with threshold voltage variation, narrow data voltage range, and body effect on a backplane of silicon-based transistors. It consists of six PMOS transistors and two capacitors. The data voltage range is extended by the capacitor division with two capacitors, and the connection of both source and gate nodes to the supply voltage makes the driving transistor free from the body effect. In addition, the reference voltage is used to initialize the gate node voltage of the driving transistor as well as to adjust the data voltage region. By the SPICE simulation, it is verified that the current error over the threshold voltage variations of ±10 mV is reduced to be −1.200% to 0.964% at the maximum current range of around 8 nA, and the data voltage range is extended to 3.4 V, compared to the large current error range from −21.46% to 27.36% and the data voltage range of 0.41 V in the basic 2T1C circuit. In addition, the body-effect-free circuit outperforms the latest 4T1C circuit of the current error range from −3.279% to 3.388%.

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P‐47: An OLEDoS Pixel Circuit with Extended Data Voltage Range for High Resolution Micro‐Displays

Cited by 7 publications

References 9 publications

P‐214: TADF/Fluorescent Hybrid WOLED Device with Adjustable Color Temperature

P‐214: TADF/Fluorescent Hybrid WOLED Device with Adjustable Color Temperature

Review of Capacitive Touchscreen Technologies: Overview, Research Trends, and Machine Learning Approaches

Body-Effect-Free OLED-on-Silicon Pixel Circuit Based on Capacitive Division to Extend Data Voltage Range

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