p-CdTe nanoribbon/n-silicon nanowires array heterojunctions: photovoltaic devices and zero-power photodetectors

Xie, Chao; Luo, Lin‐Bao; Zeng, Longhui; Zhu, Long; Chen, Jingjing; Nie, Biao; Hu, Jigang; Li, Qiang; Wu, Chunyan; Wang, Li; Jie, Jiansheng

doi:10.1039/c2ce25791b

Cited by 39 publications

(25 citation statements)

References 27 publications

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“…Furthermore, Xie et al firstly used a Ag-assisted chemical etching method to obtain patterned SiNWs array at particular area on the silicon substrate (Figure 9a). Then, they used mechanically transferred method to transfer CdTe nanoribbons onto the Si substrate and heterojunctions could be formed at the regions where the bottom surface on the nanoribbons contacts with the tips of n-type SiNWs array [53]. Qin et al fabricated n-CdS X Se 1−X /p + -Si parallel-nanobelt heterojunctions on a silicon-on-insulator (SOI) substrate [54].…”

Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

“…Then, they used mechanically transferred method to transfer CdTe nanoribbons onto the Si substrate and heterojunctions could be formed at the regions where the bottom surface on the nanoribbons contacts with the tips of n-type SiNWs array. [53] Qin et al fabricated n-CdSXSe1−X/p + -Si parallel-nanobelt heterojunctions on a silicon-on-insulator (SOI) substrate [54]. First, the CdSXSe1−X nanoribbon suspension was dropped onto the SOI substrate.…”

Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

“…It is considered that the enhanced light absorption and electric field strength of the ZnSe nanoribbons modified with Ag nanoparticles by localized surface plasmon resonance could lead to more electron-hole pairs generation and improve the conversion efficiency. On the other hand, Xie and Zhang et al constructed heterojunctions based on II-VI group semiconductor one-dimensional nanostructures and Si nanowire arrays in order to enhance the light absorption compared to planner Si substrates [39,53]. As a result, a p-CdTeNR/n-SiNW array heterojunction device with a conversion efficiency of 2.1% and a p-ZnSeNRs/CH 3 -SiNW array heterojunction with a conversion efficiency of 2.27% were obtained.…”

Section: Solar Cellsmentioning

confidence: 99%

“…Xie et al developed a kind of high-performance zero-power photodetector based on a p-CdTeNR/n-SiNWs array heterojunction, which could be operated in the visible to near-infrared range with good stability, high sensitivity, and fast response speed [53]. The photodetectors were run under white light illumination with an intensity of 62.5 µW cm −2 and presented excellent stability and reproducibility even at 600 Hz.…”

Section: Photodetectorsmentioning

confidence: 99%

“…[18,41,42,47,50,53,54]. He and his co-workers firstly constructed a type of CdSe/Si nano-heterojunction and then utilized the p-Si nanoribbons as gates and n-CdSe nanowires as conduction channels to act as the nano-heterojunction junction field-effect transistors with high stability and reproducibility in performance [18].…”

Section: Other Applicationsmentioning

confidence: 99%

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Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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Abstract:Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

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Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

Section: -D Nanostructure/thin Film or Si Substrate Heterojunctionsmentioning

confidence: 99%

Section: Solar Cellsmentioning

confidence: 99%

Section: Photodetectorsmentioning

confidence: 99%

Section: Other Applicationsmentioning

confidence: 99%

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Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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Low‐Dimensional Te‐Based Nanostructures

Wang¹,

Safdar²,

Wang³

et al. 2013

Advanced Materials

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Low-dimensional Te-based nanomaterials have attracted intense attention in recent years due to their novel physical properties including surface-state effects, photoelectricity, phase changes, and thermoelectricity. The recent development of synthesis methods of low-dimensional Te-based nanostructures is reviewed, such as van der Waals expitaxial growth and template-assisted solution-phase deposition. In addition, the unique properties of these materials, such as tunable surface states, high photoresponsivity, fast phase change, and high thermoelectricity figure of merit, are reviewed. The potential applications of low-dimensional Te-based nanostructures are broad but particularly promising for nanoscale electronic and photoelectronic devices.

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Near‐Infrared‐Light Photodetectors Based on One‐Dimensional Inorganic Semiconductor Nanostructures

Liang

Wang

et al. 2017

Advanced Optical Materials

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Recently, near‐infrared light photodetectors (NIRPDs) have attracted increasing interest due to their promising applications in both military and civil purposes. One‐dimensional inorganic semiconductor nanostructures (NSs) have unique electrical and optical properties and have been widely used to fabricate many NIRPDs. These prototype devices have geometries ranging from photoconductive‐type photodetectors and metal–semiconductor Schottky junction photodetectors to nano‐heterojunction photodetectors. They have good device performance including high responsivity and specific detectivity, fast response speed, low power consumption, etc. Here, we will review the state‐of‐the‐art advance in the fabrication of 1D semiconductor NSs for NIRPD application. We first briefly survey recent progress in the growth and fabrication methodologies including both bottom‐up and top‐down approaches. We also highlight the achievement in this flourishing field by sketching device fabrication, comparing the device performance, and discussing the operation mechanism. Finally, we close with unresolved issues and challenges.

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p-CdTe nanoribbon/n-silicon nanowires array heterojunctions: photovoltaic devices and zero-power photodetectors

Cited by 39 publications

References 27 publications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Low‐Dimensional Te‐Based Nanostructures

Near‐Infrared‐Light Photodetectors Based on One‐Dimensional Inorganic Semiconductor Nanostructures

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