Pac studies of ion implanted silicon

Forkel, D.; Meyer, F.; Witthuhn, W.; Wolf, H.; Deicher, M.; Uhrmacher, M.

doi:10.1007/bf02394483

Cited by 13 publications

(40 citation statements)

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“…The paper aims at understanding PAC experiments with Cd probes in Si 9,10,11 and Ge 1,2,12,13 . Of particular interest is the interaction with intrinsic defects, i.e.…”

Section: Introductionmentioning

confidence: 99%

Cd-vacancy andCd-interstitial complexes inSiand
Höhler
¹
,
Atodiresei
²
,
Schroeder
³

et al. 2004
Phys. Rev. B

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The electrical-field gradient (EFG), measured, e.g., in perturbed angular correlation experiments, gives particularly useful information about the interaction of probe atoms like 111 In/ 111 Cd with other defects. The interpretation of the EFG is, however, a difficult task. This paper aims at understanding the interaction of Cd impurities with vacancies and interstitials in Si and Ge, which represents a controversial issue. We apply two complementary ab initio methods in the framework of density-functional theory, (i) the all electron Korringa-Kohn-Rostoker Green function method and (ii) the pseudopotential-plane-wave method, to search for the correct local geometry. Surprisingly we find that both in Si and Ge the substitutional Cd-vacancy complex is unstable and relaxes to a split-vacancy complex with the Cd on the bond-center site. This complex has a very small EFG, allowing a unique assignment of the small measured EFGs of 54 MHz in Ge and 28 MHz in Si. Also, for the Cd-self-interstitial complex we obtain a highly symmetrical split configuration with large EFG's, being in reasonable agreement with experiments.

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“…The paper aims at understanding PAC experiments with Cd probes in Si 9,10,11 and Ge 1,2,12,13 . Of particular interest is the interaction with intrinsic defects, i.e.…”

Section: Introductionmentioning

confidence: 99%

Cd-vacancy andCd-interstitial complexes inSiand
Höhler
¹
,
Atodiresei
²
,
Schroeder
³

et al. 2004
Phys. Rev. B

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“…In the case of the hyperfine techniques of Mößbauer spectroscopy (MS) and PAC spectroscopy the number of suitable, long-lived probe atoms is rather limited, but their application is widespread. Among them the most commonly used isotopes are 57 Co (T 1/2 = 270 d) → 57 Fe for MS and 111 In (T 1/2 = 2.8 d) → 111 Cd for PAC. EC, radiotracer diffusion as well as electrical and optical tracer techniques enjoy a larger choice of suitable isotopes since their demands on the corresponding nuclear properties are less severe.…”

Section: Radioactive Probe Atomsmentioning

confidence: 99%

“…Some combinations of probe atoms and host lattices allow one to dope the samples directly via nuclear reactions inside the material. Typical examples are the doping of cadmium and cadmium compounds with 111 In via the 111 Cd(p, n) 111 In reaction [42] and with 117 Cd via the neutron capture reaction 116 Cd(n, γ ) 117 Cd [43] or the production of 77 Br in arsenic or arsenic compounds via the 75 As(α, 2n) 77 Br reaction [44]. However, research in nuclear solid state physics demands a much larger variety of possible combinations of probe atoms and host lattices.…”

Section: Doping Proceduresmentioning

confidence: 99%

“…However, research in nuclear solid state physics demands a much larger variety of possible combinations of probe atoms and host lattices. Long-lived isotopes like the commercially available 111 In or 57 Co are produced at cyclotrons and radio-chemically separated from the target material. Then these isotopes can be either diffused or implanted via an off-line separator into the material under study.…”

Section: Doping Proceduresmentioning

confidence: 99%

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Exploring solid state physics properties with radioactive isotopes

Forkel-Wirth

1999

Rep. Prog. Phys.

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Radioactive atoms have been used in solid state physics for many years. Established nuclear techniques such as Mößbauer spectroscopy, perturbed angular correlation, β-NMR and emission channelling have now been joined by new and successful tracer techniques like radioactive deep level transient spectroscopy, capacitance voltage measurements, Hall-effect measurements or photoluminescence spectroscopy. Numerous radioactive species, ranging from 8 Li to 213 Fr, are employed to attack problems involved with defects or impurities in metals, semiconductors and superconductors.This paper aims to give an idea of the potential of modern 'radioactive solid state physics' by briefly explaining the techniques used and describing some typical experiments.

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“…In this way one can explain the results for the strong dependence of the EFG with temperature observed experimentally. [1][2][3] We have calculated the EFG at the Cd site and the corresponding Q using the nuclear quadrupolar moment Qϭ0.83 b. 21 A quadrupolar frequency of Q ϭ22 MHz was obtained for a displacement of the Cd atom u͑Cd-C 2v )ϭ0.017 Å, a value that is extremely sensitive to the size of the displacement.…”

Section: Relaxations Local Distortions and C 2v Sliding Mode Inmentioning

confidence: 99%

Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd

1996

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The full-potential linear muffin-tin orbitals method, within the local density approximation to density functional theory has been employed to study the relaxations, anharmonicities of local modes, and the possible appearance of an electric-field gradient ͑EFG͒ at substitutional Cd in silicon. Using the supercell approach, the total energy variations associated to the T d , D 2d , and C 2v local modes, which involve silicon nearest neighbors ͑NN͒ to the Cd impurity were calculated theoretically, once the system achieved its relaxed energy minimum at a 4% volume dilation. An outward breathing relaxation of 0.12 Å ͑NN͒ and 0.05 Å ͑next-nearest neighbor͒ Si atoms around Cd was found to be the minimum energy ͑4% volume dilation and the T d distor-tion͒, although the D 2d mode showed a possible ͑but very small͒ further relaxation of 0.003 Å , similar to what has been found in the silicon neutral vacancy. At this energy minimum a C 2v sliding mode distortion of Cd was then investigated. This mode showed a strong anharmonicity with a double-well structure and an associated electric-field gradient. On the basis of the agreement between our calculated EFG and the values measured with time-differential perturbed-angular-correlation techniques together with the experimentally observed temperature dependence, we propose that of the models suggested in the literature, a dynamic Jahn-Teller mechanism could describe the appearance of the EFG.

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Pac studies of ion implanted silicon

Cited by 13 publications

References 0 publications

Cd-vacancy andCd-interstitial complexes inSiand
Höhler
¹
,
Atodiresei
²
,
Schroeder
³

et al. 2004
Phys. Rev. B

Cd-vacancy andCd-interstitial complexes inSiand
Höhler
¹
,
Atodiresei
²
,
Schroeder
³

et al. 2004
Phys. Rev. B

Exploring solid state physics properties with radioactive isotopes

Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd

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Pac studies of ion implanted silicon

Cited by 13 publications

References 0 publications

Cd-vacancy andCd-interstitial complexes inSiandHöhler1, Atodiresei2, Schroeder3 et al. 2004Phys. Rev. B

Cd-vacancy andCd-interstitial complexes inSiandHöhler1, Atodiresei2, Schroeder3 et al. 2004Phys. Rev. B

Exploring solid state physics properties with radioactive isotopes

Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd

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Cd-vacancy andCd-interstitial complexes inSiand
Höhler
¹
,
Atodiresei
²
,
Schroeder
³

et al. 2004
Phys. Rev. B

Cd-vacancy andCd-interstitial complexes inSiand
Höhler
¹
,
Atodiresei
²
,
Schroeder
³

et al. 2004
Phys. Rev. B