Paper memory by all printing technology

Abstract

We report the first paper-based nonvolatile memory device by means of an all-printing approach using a sequence of inkjet and screen printing techniques to fabricate a resistive random access memory on paper. The printed paper-based memory devices (PPMDs) can be labeled on electronics or living objects for multi-functional, wearable, on-skin, and biocompatible applications. The PPMDs would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multi-functional devices, and self-powered systems.

The potential of paper-based diagnostics to meet the ASSURED criteria

“…27 These developments show promise for complex printed integrated circuits to be produced in large volumes and become commercially implemented. Rewritable resistive switching techniques for printed memory have been showcased, 99 with a number of paper-based memory devices demonstrated 100,101 ( Fig. 7B ).…”

Recent Progress and Challenges in Paper-Based Microsupercapacitors for Flexible Electronics: A Comprehensive Review

“…The timeline of the significant milestones in the development of p-MSCs is depicted in Figure , which provides a visual representation of the crucial turning points in this field. Paper-based electronics demonstrate versatility in various applications, including memory devices, , sensors, , RFID tags, batteries, , wearable, − and medical devices . Common printing methods, such as screen printing, stamping, flexography, and inkjet printing, play pivotal roles in the fabrication process.…”

Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO2 films

“…The demonstration of ferroelectricity in HfO 2 -based films [1] has opened up opportunities for * Authors to whom any correspondence should be addressed. their application in numerous functionalities and devices, such as ferroelectric random access memories [2,3], ferroelectric field-effect transistors [4,5], negative capacitance fieldeffect transistors [6,7], ferroelectric tunnel junctions [8,9] and energy-related applications [10,11], making them promising ferroelectric thin films in integrated circuit industry. Since then, scientists and researchers have been trying to understand the origin of their ferroelectricity and develop suitable HfO 2 -based films with good ferroelectric performance for nanoelectronics.…”