Abstract:In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC… Show more
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