Pareto ANOVA analysis for CMOS 0.18µm two-stage Op-amp

Chachuli, Siti Amaniah Mohd; Fasyar, Puteri Nor Aznie; Soin, Norhayati; Karim, Nissar Mohammad; Yusop, Norbayah

doi:10.1016/j.mssp.2014.02.035

Cited by 24 publications

(14 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Now we used the series (11) into Eqs. (6) and appropriate boundary and initial conditions. The using gives the possibility to obtain equations for initial-order approximations of concentrations of complexes of defects 0(x,y,z,t), corrections for them i(x,y,z,t) (for them i 1) and boundary and initial conditions for them.…”

Section: Methods Of Solutionmentioning

confidence: 99%

See 1 more Smart Citation

On Approach to Increase Integration Rate of Elements of a Boot Strapped Switch Circuit

2019

International Journal of Innovative Research in Electronics and

View full text Add to dashboard Cite

show abstract

Section: Methods Of Solutionmentioning

confidence: 99%

“…An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1][2][3][4][5][6][7][8]. Increasing of the integration rate leads to necessity to decrease their dimensions.…”

Section: Introductionmentioning

confidence: 99%

On Approach to Increase Integration Rate of Elements of a Boot Strapped Switch Circuit

2019

International Journal of Innovative Research in Electronics and

View full text Add to dashboard Cite

show abstract

“…At the same time dimensions of the above elements decreases. To increase integration rate of elements of integrated circuits and to increase dimensions of the same elements are have been elaborated different approaches [1][2][3][4][5][6][7][8][9][10]. In the present paper we consider a heterostructure with two layers: a substrate and an epitaxial layer.…”

Section: Introductionmentioning

confidence: 99%

Influence of Overlayers on Depth of Implanted-heterojunction Rectifiers

E.L¹,

E.A²

2016

IJITMC

View full text Add to dashboard Cite

show abstract

“…At the same time one can find increasing integration rate of integrated circuits [1][2][3]5,7]. In this situation dimensions of elements of integrated circuits decreases.…”

Section: Introductionmentioning

confidence: 99%

Modification of Dopant Concentration Profile in a Field-Effect Heterotransistor for Modification Energy Band Diagram

E.L¹,

E.A²

2016

MSEJ

View full text Add to dashboard Cite

In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of channel of the transistors. We also consider an analytical approach to model and optimize technological process. KEYWORDS Modification of profile of dopant; decreasing of dimension of field-effect transistor; modification of energy band diagram

show abstract

Pareto ANOVA analysis for CMOS 0.18µm two-stage Op-amp

Cited by 24 publications

References 8 publications

On Approach to Increase Integration Rate of Elements of a Boot Strapped Switch Circuit

On Approach to Increase Integration Rate of Elements of a Boot Strapped Switch Circuit

Influence of Overlayers on Depth of Implanted-heterojunction Rectifiers

Modification of Dopant Concentration Profile in a Field-Effect Heterotransistor for Modification Energy Band Diagram

Contact Info

Product

Resources

About