Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled precipitation

Kiehl, R.A.; Yamaguchi, Mari; Ueda, Osamu; Horiguchi, N.; Yokoyama, N.

doi:10.1063/1.116419

Cited by 23 publications

(14 citation statements)

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“…35,36 Analogously, the controlled assembly of MnAs precipitates within the GaAs matrix using surface stressors appears feasible. The precipitates elastically interact with the stress field of the matrix.…”

Section: Discussionmentioning

confidence: 99%

Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs

Moreno

Jenichen

Däweritz

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Adjusting the magnetic properties of semiconductor epilayers by the crystallographic orientation of embedded highly anisotropic magnetic nanoclusters Granular GaAs:MnAs, consisting of MnAs nanoclusters embedded in a GaAs matrix, is a hybrid ferromagnet-semiconductor material with potential applications in information storage, magneto-optical, and spin electronics devices. It can be obtained, through phase separation, by high-temperature annealing of diluted ͑Ga,Mn͒As films grown by molecular-beam epitaxy. The granular material thus obtained exhibits room-temperature ferromagnetism and excellent crystal quality, but the magnetic anisotropy is weak and control of the ordering of the clusters in lateral directions of the film has not been achieved yet. We have investigated the strain state of granular GaAs:MnAs films on GaAs͑001͒ substrates at room temperature by x-ray diffraction. Two-dimensional reciprocal-space maps are presented, including x-ray reflections from the GaAs matrix and from the nanosized MnAs crystallites. Based on the x-ray diffraction results, we propose strategies to guide the assembly of the MnAs precipitates within the GaAs matrix, such that ͑i͒ lateral order within the film and ͑ii͒ single crystallographic orientation of the precipitates relative to the matrix can be achieved. The approach is based on the use of anisotropies and inhomogeneities in the elastic interaction of the crystallites with the matrix to control the precipitation process.

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Section: Discussionmentioning

confidence: 99%

Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs

Moreno

Jenichen

Däweritz

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…3,4 We are studying applications in this self-assembly technique to the fabrication of single-electron tunneling devices in which the arsenic particles serve as small metallic islands separated by GaAs tunneling barriers. 1,2 It has been shown that the position of particles in the growth direction can be controlled by composition while the lateral position can be controlled by strain produced by a surface stress structure.…”

Section: Annealing Cycle Dependence Of Preferential Arsenic Precipitamentioning

confidence: 99%

Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers

Hung

Harris

Marshall

et al. 1998

Applied Physics Letters

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“…Generally, photoresist processing and etching follow to form the final structures. 4 However, the main challenges of all self-assembly techniques are precise control of the dimensions of the structures and reproducibility. Thus alter native approaches are under investigation, including different self-assembly tech niques.…”

Section: Introductionmentioning

confidence: 99%

Self-Assembled Patterning of Ultrathin Silicides by Local Oxidation

Mantl¹,

Zhao²,

Kabius

1999

MRS Bull.

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Most microfabrication techniques employ masks to transfer the desired microstructure onto a wafer using ultraviolet light, x-rays, electrons, or ions for the projection of the structures. Generally, photoresist processing and etching follow to form the final structures. In all cases, the facilities necessary to perform these processes grow increasingly more complex as the feature size of the structures diminishes, and these processes face their practical or economic limits at dimensions of about 50 nm. Thus alternative approaches are under investigation, including different self-assembly techniques. They require no costly facilities and no masks with nanometer structures, and they promise high throughput, since the patterning is directly achieved by a physical or chemical process. Self-assembled monolayers of long-chain organic molecules are the most widely studied examples, where chemisorption and spontaneous self-ordering of the molecules are observed on appropriate substrates. Another interesting example is island-ordering, laterally or in a vertical direction, during epitaxial growth. The lattice-mismatched islands tend to nucleate preferentially on top of each other when separated by a thin spacer layer, due to the associated strain field. Another approach is the use of specific stressor layers on the surface to obtain alignment of buried precipitates along the stressor lines. However, the main challenges of all self-assembly techniques are precise control of the dimensions of the structures and reproducibility.

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Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled precipitation

Cited by 23 publications

References 0 publications

Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs

Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs

Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers

Self-Assembled Patterning of Ultrathin Silicides by Local Oxidation

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