Patterning in an Imperfect World—Limitations of Focused Ion Beam Systems and Their Effects on Advanced Applications at the 14 nm Process Node

Abstract

This paper provides information on ion beam dose delivery and machining a perfect pattern in an ideal world and summarizes the various beam control limitations of the current generation systems. It discusses conventional and proposed solutions to these limitations and highlights their effect on minimum dimension nanomachining applications at the 14 nm Si process node and beyond. The paper highlights the solutions that can be implemented to help negate inconsequential effects of systems. With that in mind, the most significant of these factors in limiting a tool's ability to complete a perfect pattern can be grouped into two categories: timing and placement and non-uniform dose delivery. With good understanding and discipline, most of these issues described can be corrected, significantly minimized, or simply avoided.