Patterning of quantum dot light‐emitting diodes based on IGZO films

Abstract

The patterning of quantum dot light-emitting diodes (QLED) is essential for QLED in the display application. In the work, we studied patterning thin film to form IGZO electron transport layers for QLED. Making use of a staggered IGZO film as the electron transport layer, we studied QLED degradation and observed luminance inversion, which is due to the non-uniform current spreading effect caused by the staggered IGZO film. The current crowding at the thinner film area (with lower electric resistance) leads to a patterned emission of the device but also a faster device degradation at the same time.