Pb - Sn Solder for Die Bonding of Silicon Chips

Inoue, Hiroshi; Kurihara, Y.; Hachino, H.

doi:10.1109/tchmt.1986.1136634

Cited by 25 publications

(5 citation statements)

References 4 publications

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“…In this case, the initial crystal containing much Pb is surrounded by cocrystals of Pb and Sn. Although Sb is present in this alloy, it is practically close to Pb-50wt%Sn composition (Table 3), and the metallography is equivalent to the Pb-Sn binary alloy [10].…”

Section: Effect Of Pb Additive Amount On Melting Temperature and Metamentioning

confidence: 83%

Influence of Pb impurity on melting point and metallography of Sn-5wt%Sb alloy

Endoh

Kurihara

1998

Electron. Comm. Jpn. Pt. II

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Influence of Pb impurity on the melting point and metallography of Sn‐5wt%Sb alloy is investigated. The Sn‐Sb‐Pb three‐element alloy made of Pb doped to Sn‐Sb systems melts at a temperature lower than the melting point of Sn‐5wt%Sb material and exhibits thermal absorption phenomena at 185°C to 190°C and 210°C to 240°C. Also, the three element alloy (1) exhibits a metallography consisting of the crystal grains of Sn‐Sb alloy with a small content of Pb and of the grain boundary region mainly made of Pb‐Sn alloy, if the Pb doping is low, and (2) the grain boundary region made of Pb‐Sn alloy increases as Pb doping is increased. In the temperature rising process, melting starts at the grain boundary region (at about 185°C) and terminates melting at 210°C to 240°C depending on the Pb content. The melting region is gradually expanding from the grain boundary to the interior of the crystal grain. The ternary alloy with Pb concentration adjusted to 1.5 wt% hardly melts at temperatures below 230°C. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(1): 1–12, 1998

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Section: Effect Of Pb Additive Amount On Melting Temperature and Metamentioning

confidence: 83%

Influence of Pb impurity on melting point and metallography of Sn-5wt%Sb alloy

Endoh

Kurihara

1998

Electron. Comm. Jpn. Pt. II

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“…Figure 5 shows cross-sectional SEM images of the as-reflowed Si/solder/Cu sandwiched sample, where the silicon and copper layers were well bonded and no defects at the Si/solder and Cu/solder interfaces, and in the solder bulk were observed. As shown in 9 also observed that cracks initiated in the area near the Si side when they tested the thermal fatigue life of Sn-Pb solder for die bonding to copper substrate. Moy and Shen 10 found that failure of solder joints under shear frequently occurs along a path near and parallel to, but not necessarily exactly at, the interface between the alloy and the bonding material.…”

Section: Methodsmentioning

confidence: 82%

Influence of Thermal Cycling on the Thermal Resistance of Solder Interfaces

Guo

Shang

2009

Journal of Elec Materi

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The thermal resistance of Si/Sn-52In/Cu sandwiched samples was measured by the laser flash method after various stages of thermal cycling. The thermal resistance was found to increase with increasing thermal cycles after 120 cycles. Cross-sections of the samples were examined by scanning electron microscopy. Cracks were observed in both the solder bulk and the interface between the intermetallic compound and solder. The increase of the thermal resistance was related to widening of the crack segments that were inclined to the interface.

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“…4). Although Sb is present in this alloy, it is practically close to Pb-50wt%Sn composition (Table 3), and the metallography is equivalent to the Pb-Sn binary alloy [10]. On the other hand, the crystal grains tend to become finer as the Pb amount is increased.…”

Section: Effect Of Pb Additive Amount On Melting Temperature and Metamentioning

confidence: 77%

Influence of Pb impurity on melting point and metallography of Sn‐5wt%Sb alloy

Endoh¹,

Kurihara²

1998

Electron. Comm. Jpn. Pt. II

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Influence of Pb impurity on the melting point and metallography of Sn-5wt%Sb alloy is investigated. The Sn-Sb-Pb three-element alloy made of Pb doped to Sn-Sb systems melts at a temperature lower than the melting point of Sn-5wt%Sb material and exhibits thermal absorption phenomena at 185°C to 190°C and 210°C to 240°C. Also, the three element alloy (1) exhibits a metallography consisting of the crystal grains of Sn-Sb alloy with a small content of Pb and of the grain boundary region mainly made of Pb-Sn alloy, if the Pb doping is low, and (2) the grain boundary region made of Pb-Sn alloy increases as Pb doping is increased. In the temperature rising process, melting starts at the grain boundary region (at about 185°C) and terminates melting at 210°C to 240°C depending on the Pb content. The melting region is gradually expanding from the grain boundary to the interior of the crystal grain. The ternary alloy with Pb concentration adjusted to 1.5 wt% hardly melts at temperatures below 230°C. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(1): 112, 1998

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Pb - Sn Solder for Die Bonding of Silicon Chips

Cited by 25 publications

References 4 publications

Influence of Pb impurity on melting point and metallography of Sn-5wt%Sb alloy

Influence of Pb impurity on melting point and metallography of Sn-5wt%Sb alloy

Influence of Thermal Cycling on the Thermal Resistance of Solder Interfaces

Influence of Pb impurity on melting point and metallography of Sn‐5wt%Sb alloy

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