Quantum Sensing and Nano Electronics and Photonics XVIII 2022
DOI: 10.1117/12.2610769
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Peltier cooled LWIR lateral effect position sensitive HgCdTe photodetector

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“…The lateral-effect position-sensitive Peltier-cooled LWIR detector was recently demonstrated [ 20 ] for the first time to the authors’ knowledge and described in more detail here. It was based on a modified PIN HgCdTe photodiode with a spectral sensitivity range of 3–11 μm, forming the tetra-lateral PSD with a photosensitive area of 1 × 1 mm 2 .…”
Section: Discussionmentioning
confidence: 99%
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“…The lateral-effect position-sensitive Peltier-cooled LWIR detector was recently demonstrated [ 20 ] for the first time to the authors’ knowledge and described in more detail here. It was based on a modified PIN HgCdTe photodiode with a spectral sensitivity range of 3–11 μm, forming the tetra-lateral PSD with a photosensitive area of 1 × 1 mm 2 .…”
Section: Discussionmentioning
confidence: 99%
“… Principle of operation of the PSD tetra-lateral photodiode (adapted with permission from Ref. [ 20 ]; copyright: 2022, SPIE). The photosensitive area is in grey.…”
Section: Figurementioning
confidence: 99%
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