Pendant conjugated molecules based on a heterogeneous core structure with enhanced morphological and emissive properties for organic semiconductor lasing

Liu, Xu; Sang, Ming; Zhou, Jinghan; Xu, Shihao; Zhang, Jialing; Yu, Yan; He, Lin; Lai, Wen‐Yong

doi:10.1039/d0qm00418a

Cited by 11 publications

(8 citation statements)

References 32 publications

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“…The amplification characteristics of all BEHP‐PPV:MEH‐PPV blended samples are summarized in Table S3, Supporting Information. As a point of comparison, the measured ASE thresholds obtained here are among the lowest values reported in dendritic starbursts, [ 42–45 ] polymers, [ 46,47 ] and guest–host gain systems under nanosecond pulse excitation. [ 36,37,48–50 ] Intriguingly, the peaks of green amplification in the blended polymers do not show any shift with respect to the blending ratio (Figure 2e).…”

Section: Resultsmentioning

confidence: 71%

Gain Bandwidth Engineering in Polymer Blends for Full‐Color‐Tunable Lasers

Jiang

Wei

et al. 2022

Advanced Optical Materials

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Developing semiconductors with broad gain bandwidth has always been at the forefront of laser technologies. The variation in feedback resonators can provide a useful tool for producing a relatively wide range of discrete lasing wavelengths. However, the lasing wavelength range is limited by the fundamental gain bandwidth of the semiconductor itself. Gain bandwidth engineering for full‐color range lasing though remains a daunting challenge. Considering the abundant energy levels of organic semiconductors, the authors stride over the barrier of the gain bandwidth limitation and demonstrate the dynamically tunable amplification/lasing across the entire emission range by leveraging on Förster resonance energy transfer (FRET)‐assisted guest–host blends. The unprecedented tunability in amplification and lasing is governed by energy transfer process, which enables them to achieve wavelength‐tunable semiconductor lasers spanning the full visible region of the electromagnetic spectrum. Their distributed feedback (DFB) lasers using these guest–host blends as gain media cover almost all CIE color gamut (94%), which is 170% more perceptible colors than standard Red Green Blue color space. These insights can guide the versatile and convenient design of organic semiconductor materials transcending the current gain bandwidth limitation, paving the way for next generation of optoelectronic devices.

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Section: Resultsmentioning

confidence: 71%

Gain Bandwidth Engineering in Polymer Blends for Full‐Color‐Tunable Lasers

Jiang

Wei

et al. 2022

Advanced Optical Materials

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“…In recent years, organic semiconductor laser diodes (OSLDs) have been intensively researched in terms of materials development, mechanism investigation, and device optimization. [ 1–11 ] OSLDs benefit from advantages such as wavelength tunability, mechanical flexibility, and simple fabrication processes compared with conventional inorganic semiconductor lasers, and therefore show great promise in future optoelectronics. Although the first demonstration of a blue OSLD under current excitation was reported based on a blue laser material known as 4,4′‐bis([ N ‐carbazole]styryl)biphenyl, [ 12 ] the development of OSLDs that cover the full color range is highly demanded to expand the possibilities of their applications.…”

Section: Figurementioning

confidence: 99%

Realizing Near‐Infrared Laser Dyes through a Shift in Excited‐State Absorption

Aoki

Komatsu

Goushi

et al. 2021

Advanced Optical Materials

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The development of near‐infrared (NIR) light sources has attracted much interest due to their attractive applications, such as biosensing and light detection and ranging (LiDAR). In particular, organic semiconductor laser diodes with NIR emission are emerging as a next generation technology. However, organic NIR emitters have generally suffered from a low quantum yield, which has resulted in only a few examples of organic solid‐state NIR lasers. In this study, the authors demonstrate a highly efficient NIR emitter based on a boron difluoride curcuminoid structure, which shows a high photoluminescence (PL) quantum yield (ΦPL) at >700 nm and a high fluorescence radiative rate constant in a solid‐state film. Amplified spontaneous emission and lasing occurs at >800 nm with very low thresholds. The large redshift of the stimulated emission is attributed to the transition from the lowest excited state to the different vibrational levels of the ground state owing to the overlap between the emission and the singlet–singlet excited‐state absorption.

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“…The findings reveal that 2D tin(II)-based RPP SCs are good solution-processed optical-gain materials with the potential for achieving electrically driven lasers. [32][33][34][35]…”

Section: Introductionmentioning

confidence: 99%